Справочник транзисторов. PMST5550

 

Биполярный транзистор PMST5550 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PMST5550
   Маркировка: -1F_t1F_W1F
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: SOT323

 Аналоги (замена) для PMST5550

 

 

PMST5550 Datasheet (PDF)

 ..1. Size:125K  philips
pmst5550 pmst5551.pdf

PMST5550
PMST5550

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187PMST5550; PMST5551NPN high-voltage transistorsProduct data sheet 1999 Apr 29Supersedes data of 1997 May 20 NXP Semiconductors Product data sheetNPN high-voltage transistors PMST5550; PMST5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLICATION

 ..2. Size:50K  philips
pmst5550 pmst5551 4.pdf

PMST5550
PMST5550

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST5550; PMST5551NPN high-voltage transistors1999 Apr 29Product specificationSupersedes data of 1997 May 20Philips Semiconductors Product specificationNPN high-voltage transistors PMST5550; PMST5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 base2 emitterAPPLI

 ..3. Size:341K  nxp
pmst5550 pmst5551.pdf

PMST5550
PMST5550

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:47K  philips
pmst5088 pmst5089 3.pdf

PMST5550
PMST5550

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST5088; PMST5089NPN general purpose transistors1999 Apr 22Product specificationSupersedes data of 1997 May 22Philips Semiconductors Product specificationNPN general purpose transistors PMST5088; PMST5089FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 30 V).1 base2 emitterA

 9.2. Size:49K  philips
pmst5401 3.pdf

PMST5550
PMST5550

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST5401PNP high-voltage transistor1999 Apr 29Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP high-voltage transistor PMST5401FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 150 V).1 base2 emitterAPPLICATIONS3 collector

 9.3. Size:309K  nxp
pmst5088 pmst5089.pdf

PMST5550
PMST5550

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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History: 2SC2781

 

 
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