Справочник транзисторов. PUMB11

 

Биполярный транзистор PUMB11 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PUMB11
   Маркировка: B*1
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 10 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 3 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT363

 Аналоги (замена) для PUMB11

 

 

PUMB11 Datasheet (PDF)

 ..1. Size:137K  philips
pemb11 pumb11.pdf

PUMB11
PUMB11

DISCRETE SEMICONDUCTORS DATA SHEETPEMB11; PUMB11PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 03Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB11; PUMB11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

 ..2. Size:60K  philips
pumb11 1.pdf

PUMB11
PUMB11

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMB11PNP resistor-equipped doubletransistorProduct specification 2000 Aug 08Philips Semiconductors Product specificationPNP resistor-equipped double transistor PUMB11FEATURES Transistors with built-in bias resistors R1 and R2(typ. 10 k each) No mutual interference between the transistors6 5 4handbook,

 9.1. Size:137K  philips
pemb1 pumb1.pdf

PUMB11
PUMB11

DISCRETE SEMICONDUCTORS DATA SHEETPEMB1; PUMB1PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2003 Oct 15Supersedes data of 2001 Sep 13NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB1; PUMB1R1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 9.2. Size:214K  nxp
pemb16 pumb16.pdf

PUMB11
PUMB11

PEMB16; PUMB16PNP/PNP resistor-equipped transistors;R1 = 22 k, R2 = 47 kRev. 03 31 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB16 SOT666 - PEMD16 PEMH16PUMB16 SOT363 SC-88 PUMD16 PUMH161.2 Features Bui

 9.3. Size:801K  nxp
pemb15 pumb15.pdf

PUMB11
PUMB11

PEMB15; PUMB15PNP/PNP resistor-equipped transistors;R1 = 4.7 k, R2 = 4.7 kRev. 5 16 December 2011 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP NPN/NPN Package complement complement configurationNXP

 9.4. Size:67K  nxp
pemb13 pumb13.pdf

PUMB11
PUMB11

DISCRETE SEMICONDUCTORS DATA SHEETPEMB13; PUMB13PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Apr 15Supersedes data of 2003 Dec 11NXP Semiconductors Product data sheetPNP/PNP resistor-equipped transistors; PEMB13; PUMB13R1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX.

 9.5. Size:801K  nxp
pemb10 pumb10.pdf

PUMB11
PUMB11

PEMB10; PUMB10PNP/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 47 kRev. 3 3 January 2012 Product data sheet1. Product profile1.1 General descriptionPNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP NPN/NPN Package complement complement configurationNXP JEITAPEM

 9.6. Size:604K  nxp
pemb18 pumb18.pdf

PUMB11
PUMB11

PEMB18; PUMB18PNP/PNP resistor-equipped transistors;R1 = 4.7 k, R2 = 10 kRev. 5 21 December 2011 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP NPN/NPN Package complement complement configurationNXP J

 9.7. Size:64K  nxp
pemb17 pumb17.pdf

PUMB11
PUMB11

PEMB17; PUMB17PNP/PNP resistor-equipped transistors;R1 = 47 k, R2 = 22 kRev. 03 1 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB17 SOT666 - PEMD17 PEMH17PUMB17 SOT363 SC-88 PUMD17 PUMH171.2 Features B

 9.8. Size:64K  nxp
pemb14 pumb14.pdf

PUMB11
PUMB11

PEMB14; PUMB14PNP/PNP resistor-equipped transistors;R1 = 47 k, R2 = openRev. 02 31 August 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB14 SOT666 - PEMD14 PEMH14PUMB14 SOT363 SC-88 PUMD14 PUMH141.2 Features Built-

 9.9. Size:63K  nxp
pemb19 pumb19.pdf

PUMB11
PUMB11

PEMB19; PUMB19PNP/PNP resistor-equipped transistors;R1 = 22 k, R2 = openRev. 02 1 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP resistor-equipped transistorsTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB19 SOT666 - PEMD19 PEMH19PUMB19 SOT363 SC-88 PUMD19 PUMH191.2 Features Buil

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