2N5667 - описание и поиск аналогов

NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N5664 2N5

NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 Hermetic SMD0.5 Ceramic Surface Mount. Ideally Suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 400V VCEO Collector Emitter Voltage 300V VEBO Emitter Base Voltage 6V IC Cont

2N5665SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

2N5664SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 3A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

2N5666SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 3A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

2N5666SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

2N5664SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS FEATURES ! HIGH VOLTAGE FAST SWITCHING CERAMIC SURFACE MOUNT PACKAGE SCREENING OPTIONS AVAILABLE

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N5664 2N5

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N5664 2N5

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN 2N5660U3 2N5661U3 2N5663 JANTX JANT

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices Qualified Level JAN, JANTX 2N5660 2N5661 2N5662 2N5663 JANTXV MAXIMUM RATINGS 2N5660 2N5661 Ratings Symbol Unit 2N5662 2N5663 Collector-Emitter Voltage 200 300 Vdc VCEO Collector-Base Voltage 250 400 Vdc VCBO Collector-Emitter Voltage 250 400 Vdc VCER Emitter-Base Voltage 6.0

TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices Qualified Level Devices Qualified Level JAN JAN 2N5666 2N5667 JANTX 2N5664 2N5665 JANTX 2N5666S 2N5667S JANTXV JANTXV JANS MAXIMUM RATINGS 2N5664 2N5665 Ratings Symbol 2N5666, S 2N5667, S Unit Collector-Emitter Voltage 200 300 Vdc VCEO TO-66* (TO-213AA) Collector-Ba

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 DEVICES LEVELS 2N5660 2N5661 2N5662 JAN 2N5660U3 2N5661U3 2N5663 JANTX JANT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5664 2N5665 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em

isc Silicon NPN Power Transistor 2N5665 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5660 2N5661 DESCRIPTION With TO-66 package High breakdown voltage APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Em

isc Silicon NPN Power Transistor 2N5661 DESCRIPTION Collector-Emitter Breakdown Voltage- V =300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 30