Биполярный транзистор BDW93CFP - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDW93CFP
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 33 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 750
Корпус транзистора: TO220FP
BDW93CFP Datasheet (PDF)
bdw93cfp bdw94cfp.pdf
BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT
bdw93cfp.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CFPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CFPMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElec
bdw93cf.pdf
BDW93CFHammer Drivers, Audio Amplifiers Applications Power Darlington TR Complement to BDW94CF respectivelyTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V IC Collector Current (DC) 12 A I
bdw93c bdw94c.pdf
DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBDW93C/BDW94C APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES
hbdw93c.pdf
NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW93C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25
bdw93 bdw93a bdw93b bdw93c.pdf
isc Silicon NPN Power Transistor BDW93/A/B/CDESCRIPTIONCollector Current -I = 12ACCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDW93; 60V(Min)- BDW93ACEO(SUS)80V(Min)- BDW93B; 100V(Min)- BDW93CComplement to Type BDW94/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio ampl
bdw93c.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDW93CDESCRIPTIONWith TO-220 packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW94CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectroni
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050