Биполярный транзистор BDW94CFP - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDW94CFP
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 33 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 750
Корпус транзистора: TO220FP
BDW94CFP Datasheet (PDF)
bdw93cfp bdw94cfp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BDW93CFPBDW94CFPCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES MONOLITHIC DARLINGTONCONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT)321APPLICATIONS LINEAR AND SWITCHING INDUSTRIALT0-220FPEQUIPMENT
bdw94cfp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor BDW94CFPDESCRIPTIONWith TO-220F packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to Type BDW93CFPMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElec
bdw94cf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
July 2005BDW94CFPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93CF RespectivelyTO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VIC Collector Current (DC) -12 A
bdw94c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
January 2005BDW94/CPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C RespectivelyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage: BDW94 -45 V: BDW94C -100 VVCEO Collector-Emitter Voltage:
bdw94 bdw94c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
hbdw94c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PNP DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HBDW94C APPLICATIONS Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25
bdw94 bdw94a bdw94b bdw94c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc Silicon PNP Power Transistor BDW94/A/B/CDESCRIPTIONCollector Current -I = -12ACCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDW94; -60V(Min)- BDW94ACEO(SUS)-80V(Min)- BDW94B; -100V(Min)- BDW94CComplement to Type BDW93/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: PBSS303PX