Биполярный транзистор BUL1102E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUL1102E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO220 TO220FP
BUL1102E Datasheet (PDF)
bul1102e.pdf
BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.
bul1102e.pdf
isc Silicon NPN Power Transistor BUL1102EDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFour lamp electronic ballsat for : 120v mains in push-pullconfigurationABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emit
bul1102efp.pdf
BUL1102EHigh voltage fast-switchingNPN power transistorFeatures High voltage capability Very high switching speedTABApplicationsFour lamp electronic ballast for:3322 120 V mains in push-pull configuration 11 277 V mains in half bridge current feed TO-220FPTO-220configurationDescriptionThis is a high voltage fast switching NPN power Figure 1.
bul118-1.pdf
BULD118-1HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS:3 ELECTRONIC BALLASTS FOR21FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERSIPAKDESCRIPTION(TO-251)The device is manufactured usin
bul116d.pdf
BUL116DMEDIUM VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATA INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 3223 W AT 110 V A.C. MAINS1 FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERS
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050