Биполярный транзистор MD1802FX - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MD1802FX
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 57 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 5.5
Корпус транзистора: TO3PF
MD1802FX Datasheet (PDF)
md1802fx.pdf
MD1802FXHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirements32 Tight hFE range at operating collector current1 Fully insulated power package U.L. compliantISOWATT218F
md1802fx.pdf
isc Silicon NPN Power Transistor MD1802FXDESCRIPTION High Voltage Low base-drive requirements Collector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TVSwitch mode power supplies for CRT TVABSOLUTE MAXIMUM RATINGS(T =25)aSY
md1803dfh.pdf
www.DataSheet4U.comMD1803DFHHigh voltage NPN Power transistor for standard definition CRTdisplayFeatures State-of-the-art technology: Diffused collector enhanced generation More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current321 Fully insulated power package
md1803dfp.pdf
MD1803DFPHigh voltage NPN Power transistor for standard definition CRTdisplayFeatures State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current32 Fully insulated power package UL compliant 1TO-220FP I
md1803dfx.pdf
MD1803DFXHigh voltage NPN Power transistor for standard definition CRTdisplayFeatures State-of-the-art technology: Diffused collector enhanced generation More stable performance versus operating temperature variation Low base drive requirement3 Tighter hFE range at operating collector current21 Fully insulated power package U.L. compliant I
md1803dfx.pdf
isc Silicon NPN Power Transistor MD1803DFXDESCRIPTION High Voltage Low base-drive requirements Collector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050