Справочник транзисторов. MD1803DFX

 

Биполярный транзистор MD1803DFX - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MD1803DFX
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 57 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5.5
   Корпус транзистора: TO3PF

 Аналоги (замена) для MD1803DFX

 

 

MD1803DFX Datasheet (PDF)

 ..1. Size:202K  st
md1803dfx.pdf

MD1803DFX
MD1803DFX

MD1803DFXHigh voltage NPN Power transistor for standard definition CRTdisplayFeatures State-of-the-art technology: Diffused collector enhanced generation More stable performance versus operating temperature variation Low base drive requirement3 Tighter hFE range at operating collector current21 Fully insulated power package U.L. compliant I

 ..2. Size:218K  inchange semiconductor
md1803dfx.pdf

MD1803DFX
MD1803DFX

isc Silicon NPN Power Transistor MD1803DFXDESCRIPTION High Voltage Low base-drive requirements Collector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

 6.1. Size:223K  1
md1803dfh.pdf

MD1803DFX
MD1803DFX

www.DataSheet4U.comMD1803DFHHigh voltage NPN Power transistor for standard definition CRTdisplayFeatures State-of-the-art technology: Diffused collector enhanced generation More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current321 Fully insulated power package

 6.2. Size:208K  st
md1803dfp.pdf

MD1803DFX
MD1803DFX

MD1803DFPHigh voltage NPN Power transistor for standard definition CRTdisplayFeatures State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current32 Fully insulated power package UL compliant 1TO-220FP I

 9.1. Size:210K  st
md1802fx.pdf

MD1803DFX
MD1803DFX

MD1802FXHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirements32 Tight hFE range at operating collector current1 Fully insulated power package U.L. compliantISOWATT218F

 9.2. Size:219K  inchange semiconductor
md1802fx.pdf

MD1803DFX
MD1803DFX

isc Silicon NPN Power Transistor MD1802FXDESCRIPTION High Voltage Low base-drive requirements Collector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for TVSwitch mode power supplies for CRT TVABSOLUTE MAXIMUM RATINGS(T =25)aSY

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
Back to Top