ST13007DFPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARA

ST13007DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARACT

ST13007FP HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDo FULLY CHARACTERIZED AT 125 C LARGE RBSOA32APPLICATIONS1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220FP SWITCH MODE POWER SUPPLIESDESCRIPTION

ST13007High voltage fast-switching NPN power transistorFeatures DC current gain classificationTAB High voltage capability Low spread of dynamic parameters Very high switching speedApplications 321 Electronic ballast for fluorescent lightingTO-220 Switch mode power suppliesDescriptionFigure 1. Internal schematic diagramThe device is manufactured

ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current IC 8 AOTotal Power Dissipation (Ta = 25 C) Ptot 2 WOTotal Power Dissipation (