Справочник транзисторов. STBV42

 

Биполярный транзистор STBV42 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: STBV42
   Маркировка: BV42
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO92

 Аналоги (замена) для STBV42

 

 

STBV42 Datasheet (PDF)

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stbv42.pdf

STBV42 STBV42

STBV42High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications Compact fluorescent lamps (CFLs) SMPS for battery chargerTO-92 TO-92APDescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching Figure 1. Internal

 0.1. Size:113K  st
stbv42d.pdf

STBV42 STBV42

STBV42DHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diodeApplication Compact fluorescent lamps (CFLs)TO-92DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching Fi

 0.2. Size:206K  foshan
stbv42d.pdf

STBV42 STBV42

STBV42D NPN /SILICON NPN TRANSISTOR : /Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. :,,/Features: High voltage capability, low spread of dynamic

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stbv45.pdf

STBV42 STBV42

STBV45High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLs)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured us

 9.2. Size:217K  foshan
stbv45d.pdf

STBV42 STBV42

STBV45D NPN /SILICON NPN TRANSISTOR : /Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. :,,/Features: High voltage capability,low spread of dynamic

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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