Справочник транзисторов. STBV45

 

Биполярный транзистор STBV45 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: STBV45
   Маркировка: BV45
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.95 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 0.75 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO92

 Аналоги (замена) для STBV45

 

 

STBV45 Datasheet (PDF)

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stbv45.pdf

STBV45
STBV45

STBV45High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLs)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured us

 0.1. Size:217K  foshan
stbv45d.pdf

STBV45
STBV45

STBV45D NPN /SILICON NPN TRANSISTOR : /Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. :,,/Features: High voltage capability,low spread of dynamic

 9.1. Size:262K  st
stbv42.pdf

STBV45
STBV45

STBV42High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications Compact fluorescent lamps (CFLs) SMPS for battery chargerTO-92 TO-92APDescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching Figure 1. Internal

 9.2. Size:113K  st
stbv42d.pdf

STBV45
STBV45

STBV42DHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diodeApplication Compact fluorescent lamps (CFLs)TO-92DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching Fi

 9.3. Size:206K  foshan
stbv42d.pdf

STBV45
STBV45

STBV42D NPN /SILICON NPN TRANSISTOR : /Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. :,,/Features: High voltage capability, low spread of dynamic

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 

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