Биполярный транзистор 2N5686 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5686
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 300 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 50 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Ёмкость коллекторного перехода (Cc): 1000 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2N5686 Datasheet (PDF)
2n5684 2n5685 2n5686.pdf
Order this documentMOTOROLAby 2N5684/DSEMICONDUCTOR TECHNICAL DATAPNP2N5684High-Current ComplementaryNPNSilicon Power Transistors2N5685. . . designed for use in highpower amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes.*2N5686 DC Current Gain hFE = 1560 @ IC = 25 Adc Low CollectorEmitter Sa
2n5684 2n5686.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
2n5686g.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
2n5679 2n5680 2n5681 2n5682.pdf
DATA SHEET2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN
2n5684g.pdf
2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte
2n5681smd05.pdf
2N5681SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 100V IC = 1A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her
2n5679 2n5680 2n5681 2n5682.pdf
IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39Boca Semiconductor Corp. BSCThese Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5
2n5679 2n5680 81 82.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39These Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5679 2N5680 UNITS2N5681 2N5682Collector -Emitter Voltage VCEO 100 120 VCollector -Base
2n5679 2n5680.pdf
PNP Power Silicon Transistor2N5679 & 2N5680Features Available in JAN, JANTX and JANTXVper MIL-PRF-19500/582 TO-39 (TO-205AD) PackageMaximum Ratings (TA = 25C unless otherwise noted)Ratings Symbol 2N5679 2N5680 UnitsCollector - Emitter Voltage VCEO 100 120 VdcCollector - Base Voltage VCBO 100 120 VdcEmitter - Base Voltage VEBO 4.0 4.0 VdcCollector Current IC 1.0 1.0
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
