Биполярный транзистор SMBT3904PN - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SMBT3904PN
Маркировка: s3P
Тип материала: Si
Полярность: NPN*PNP
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 3.5 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT363
Аналоги (замена) для SMBT3904PN
SMBT3904PN Datasheet (PDF)
smbt3904pn s3p sot363.pdf
SMBT 3904PNNPN Silicon Switching Transistor ArrayPreliminary data4 High current gain5 Low collector-emitter saturation voltage6 Two (galvanic) internal isolated NPN/PNP Transistors in one package32VPS056041PIN ConfigurationType Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = CSMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C
smbt3904pn smbt3904upn.pdf
SMBT3904...PNNPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101SMBT3904PNSMBT3904UPNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA07177Type Marking Pin Configuration Package
smbt3904 s1a sot23.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0
smbt3904.pdf
NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT 3906 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 3904 s1A Q68000-A4416 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0
smbt3904s s1a sot363.pdf
SMBT 3904SNPN Silicon Switching Transistor Array4 High DC current gain: 0.1mA to 100mA5 Low collector-emitter saturation voltage6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3906S (PNP)32VPS056041Type Marking Ordering Code Pin Configuration PackageSMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B
smbt3904 mmbt3904 smbt3904s.pdf
SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant)
smbt3904series mmbt3904.pdf
SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For orientation in reel see package information below Pb-free
smbt3904dw1t1g mbt3904dw.pdf
MBT3904DW1T1G,MBT3904DW2T1G,SMBT3904DW1T1GDual General PurposeTransistorshttp://onsemi.comThe MBT3904DW1T1G and MBT3904DW2T1G devices are aspin-off of our popular SOT-23/SOT-323 three-leaded device. It isMARKINGdesigned for general purpose amplifier applications and is housed inDIAGRAMthe SOT-363 six-leaded surface mount package. By putting two6discrete devices in one
mbt3904dw1 mbt3904dw2 smbt3904dw1 nsvmbt3904dw1.pdf
MBT3904DW1,MBT3904DW2,SMBT3904DW1,NSVMBT3904DW1Dual General Purposewww.onsemi.comTransistorsMARKINGThe MBT3904DW1 and MBT3904DW2 devices are a spin-off ofDIAGRAMour popular SOT-23/SOT-323 three-leaded device. It is designed for6general purpose amplifier applications and is housed in the SOT-363SOT-363/SC-88/six-leaded surface mount package. By putting two discrete de
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050