Справочник транзисторов. 2SA2214

 

Биполярный транзистор 2SA2214 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA2214
   Маркировка: WK
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: UFM

 Аналоги (замена) для 2SA2214

 

 

2SA2214 Datasheet (PDF)

 ..1. Size:126K  toshiba
2sa2214.pdf

2SA2214
2SA2214

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) 1 High-speed switching: tf = 37 ns (typ.) 32Absolute Maximum Rati

 8.1. Size:165K  toshiba
2sa2219.pdf

2SA2214
2SA2214

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 17pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

 8.2. Size:125K  toshiba
2sa2215.pdf

2SA2214
2SA2214

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) 1 High-speed switching: tf = 40 ns (typ.) 32Absolute Maximum Rati

 8.3. Size:53K  sanyo
2sa2210.pdf

2SA2214
2SA2214

Ordering number : ENA0667 2SA2210SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2210High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute M

 8.4. Size:241K  onsemi
2sa2210.pdf

2SA2214
2SA2214

Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 8.5. Size:176K  onsemi
2sa2210-1e.pdf

2SA2214
2SA2214

Ordering number : ENA0667B2SA2210Bipolar Transistorhttp://onsemi.com ( )50V, 20A, Low VCE sat PNP TO-220F-3SGApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 8.6. Size:218K  inchange semiconductor
2sa2210.pdf

2SA2214
2SA2214

isc Silicon PNP Power Transistor 2SA2210DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSrelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCBOV Collector-Em

Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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