2SA562TM - описание и поиск аналогов

 ..1. Size:201K  toshiba
 2sa562tm.pdf 

2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C 1 watt amplifier application. Complementary to 2SC1959. Maximum Ratings (Ta = = 25 C) =

 8.1. Size:239K  mcc
 2sa562-y.pdf 

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

 8.2. Size:239K  mcc
 2sa562-o.pdf 

MCC TM Micro Commercial Components 2SA562-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA562-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent hFE) Linearlity Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant. See o

 8.3. Size:1015K  no
 2sa562.pdf 

 8.4. Size:206K  secos
 2sa562.pdf 

2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity Millimeter REF. Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B 4.30 4.70 C 12.70 - Product-Rank 2SA562-O 2SA562-Y D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 Range 70 140 120 240

 8.5. Size:507K  jiangsu
 2sa562.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent hFE inearlity 2. COLLECTOR 3. BASE Equivalent Circuit A562=Device code Solid dot=Green molding compound device, Z if none,the normal device Z=Rank of hFE 1 XXX=Code

 8.6. Size:308K  lge
 2sa562.pdf 

2SA562(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 m

 8.7. Size:464K  blue-rocket-elect
 2sa562m.pdf 

 8.8. Size:157K  inchange semiconductor
 2sa562o 2sa562y.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA562 DESCRIPTION Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a