2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: V = -50 V, I = -150 mA (max) CEO C High h FE Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2SC4944 Maximum R

2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features SOT-353 Small package (dual type) High voltage and high current High hFE Excellent hFE linearity 1 Complementary to 2SC4944 MARKING: SY SGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -50 VCollector-Base Voltage VCEO -50 VCollector-Emitter Voltage VEBO Emitter-Base Volta

Ordering number : ENN5507B2SA1875 / 2SC4976PNP / NPN Epitaxial Planar Silicon Transistors2SA1875 / 2SC4976High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO200V(min). 2045B Large current capacitance.[2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle

DATA SHEETSILICON TRANSISTOR2SA1871PNP SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm)voltage switching and is ideal for use in switching elements suchas switching regulators and DC/DC converters.FEATURES New package with dimensions in between those of small signal

Transistors 2SA1870(96-113-A325)308

JMnic Product Specification Silicon PNP Power Transistors 2SA1878 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1879 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1876 Case : E-pack(TE3T8)Unit : mm-3A PNPRATINGS

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1877 Case : E-pack Unit : mm(TE5T8)-5A PNPRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO -80 VCollector to Emitter Voltage VCEO -80 VEmitter to Base Voltage VEBO -7 VCollector

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1879 Case : ITO-220Unit : mm(TP7T8)-7A PNPRATINGS

SMD Type TransistorsPNP Transistors2SA1875TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High fT : fT=400MHz(typ). High breakdown voltage0.127+0.1 Large current capacitance.0.80-0.1max Complements to 2SC4976+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin

SMD Type TransistorsPNP Transistors2SA18711.70 0.1 Features High voltage Fast switching speed Complementary transistor with 2SC49420.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -600 Collector - Emitter Voltage VCEO -600 V Emitter - Base Voltage VEBO -7

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1878DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -2.5ACE(sat) CLarge Current Capability-I = -5ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1879DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -3.5ACE(sat) CLarge Current Capability-I = -7ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver