Биполярный транзистор HN1C07F - описание производителя. Основные параметры. Даташиты.
Наименование производителя: HN1C07F
Маркировка: 46
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: SM6
HN1C07F Datasheet (PDF)
hn1c07f.pdf
HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F Unit: mmAudio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector
hn1c01fu.pdf
HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings
hn1c01fe.pdf
HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q
hn1c05fe.pdf
HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C05FE Unit: mmLow Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollec
hn1c03fu.pdf
HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU Unit: mmFor Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(I = 5mA) ON BAbsolute Maximum
hn1c03f.pdf
HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h = 150 (typ.)(V =-2V, I =-4mA) FE FE CE C Low on resistance: R = 1 (typ.)(IB = 5mA) ONAbsolute Maximum Rating
hn1c01f.pdf
HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
