Биполярный транзистор RN2113ACT
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: RN2113ACT
Маркировка: DJ
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.08
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 0.9
pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора:
SOT883
CST3
Аналоги (замена) для RN2113ACT
RN2113ACT
Datasheet (PDF)
..1. Size:153K toshiba
rn2112act rn2113act.pdf RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication.
8.1. Size:276K toshiba
rn2112f rn2113f.pdf RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112F, RN1113F Equivalent Circuit Absolute Maximum Ratings (
8.2. Size:94K toshiba
rn2112fs rn2113fs.pdf RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe
8.3. Size:290K toshiba
rn2112mfv rn2113mfv.pdf RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm1.20.05 Ultra-small package, suited to very high density mounting 0.80.05 Incorporating a bias resistor into the transistor reduces the number of
8.4. Size:124K toshiba
rn2112ft-rn2113ft.pdf RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.
8.5. Size:134K toshiba
rn2112ct rn2113ct.pdf RN2112CT,RN2113CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2112CT,RN2113CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enab
8.6. Size:109K toshiba
rn2112-rn2113.pdf RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112,RN2113 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1112, RN1113 Equivalent Circuit Maximum Ratings (Ta = 25C)
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