Биполярный транзистор RN2964CT
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: RN2964CT
Маркировка: K3
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.14
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 1.2
pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: CST6
RN2964CT
Datasheet (PDF)
8.1. Size:171K toshiba
rn2961fs rn2962fs rn2963fs rn2964fs rn2964fs rn2966fs.pdf RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1
9.1. Size:184K toshiba
rn2967ct rn2969ct.pdf RN2967CT~RN2969CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967CT,RN2968CT,RN2969CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bia
9.2. Size:219K toshiba
rn2967fe-rn2969fe.pdf RN2967FE~RN2969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2967FE,RN2968FE,RN2969FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.
9.3. Size:127K toshiba
rn2967fs rn2968fs rn2969fs.pdf RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Incorporating a bias
9.4. Size:212K toshiba
rn2961ct rn2966ct.pdf RN2961CT~RN2966CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961CT,RN2962CT,RN2963CT RN2964CT,RN2965CT,RN2966CT Switching Applications Unit: mmInverter Circuit Applications 1.00.050.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a f
9.5. Size:142K toshiba
rn2961-rn2966.pdf RN2961~RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2961,RN2962,RN2963,RN2964,RN2965,RN2966 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing proc
9.6. Size:133K toshiba
rn2967-rn2969.pdf RN2967~RN2969 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2967,RN2968,RN2969 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary
9.7. Size:100K toshiba
rn296pfs 090420.pdf RN296PFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN296PFS Switching Applications Unit : mmInverter Circuit Applications Interface Circuit Applications 1.00.050.80.05 0.10.050.10.05Driver Circuit Applications 1 6 Extra small package(CST6) is applicable for extra high density fabrication. 2 5 Since bias resistance is built in the transist
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