Биполярный транзистор RN49A2 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RN49A2
Маркировка: 28
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT363 SC88 US6
RN49A2 Datasheet (PDF)
rn49a2.pdf
RN49A2 TOSHIBA Transistor Silicon NPN-PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A2 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count
rn49a5.pdf
RN49A5 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN49A5 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count en
rn49a1fe.pdf
RN49A1FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A1FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the
rn49a6fs.pdf
RN49A6FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Unit: mmInverter Circuit Applications Interface Circuit Applications 1.00.050.80.05 0.10.050.10.05Driver Circuit Applications 1 6 Two devices are incorporated into a fine pitch small mold (6-pin) 52package.
rn49a1.pdf
RN49A1 TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN49A1 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Ultra-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en
rn49a4fe.pdf
RN49A4FE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN49A4FE Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the
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