2SA1940 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SA1940 DESCRIPTION With TO-3P(I) package Complement to type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

isc Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1940 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

2SA1943N Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 2SA1943N 2SA1943N 2SA1943N 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommended for 100-W high-fidelity audio frequency amplifier outpu

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle

2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit mm High collector voltage VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Coll

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -140 V Colle

January 2009 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A. High Power Dissipation 150watts. TO-264 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Ex

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 TO-3PL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube 2SA

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JMnic Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION With TO-3PL package Complement to type 2SC5199 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltage VCEO

RoHS 2SA1943BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -15A/-230V/150W 5.00 20.00 0.20 18.00 3.30 0.20 TO-3PL FEATURES High breakdown voltage, VCEO = -230V (min) Complementary to 2SC5200BL 0.60 3.20 TO-3PL package which can be installed to the 5.45 0.05 5.45 0.05 heat sink with one screw 1 2 3 APPLICATIONS S

RoHS 2SA1941B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -10A/-140V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES High breakdown voltage, VCEO = -140V (min) 5.45 0.1 5.45 0.1 1.4 Complementary to 2SC5198B B C E TO-3P package which can be installed to the

SMD Type Transistors PNP Transistors 2SA1946 1.70 0.1 Features Low collector saturation voltage High fT,fT=180MHz(typ) High collector current ICM=-1A 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5212 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25

SMD Type Transistors PNP Transistors 2SA1947 1.70 0.1 Features High fT,fT=100MHz(typ) High collector current ICM=-1.5A Small package for mounting 0.42 0.1 0.46 0.1 Complements to 2SC5214 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -2

SMD Type Transistors PNP Transistors 2SA1945 1.70 0.1 Features High voltage High fT,fT=150MHz(typ) High collector current ICM=-600mA 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5211 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emi

SMD Type Transistors PNP Transistors 2SA1948 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-120V Complementary to 2SC5213 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V

SMD Type Transistors PNP Transistors 2SA1944 1.70 0.1 Features High voltage Low collector-to-emitter saturation voltage. High hFE hFE=400 to 800 0.42 0.1 0.46 0.1 Small package for mounting Complements to 2SC5209 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Col

2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications. 70W 2SC5198 3DA5198 Features Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25 )

Silicon NPN transistor Features Power Amplifier Applications Complementary to 2SC5200 High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc

2SA1941 Silicon PNP transistor Power Amplifier Applications Complementary to 2SC5198 High collector voltage VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the applicatio of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to d

2SA1941T6TL Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

2SA1943T7TL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -230 V CBO V Collector-

2SA1943 Minos High Power Products PNP TRANSISTORS Features Power Amplifier Applications Complementaryto2SC5200 Highcollector voltage VCEO=-230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change in temperature, etc.) may causethis pro

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base V

2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta

isc Silicon PNP Power Transistor 2SA1943N DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency a

isc Silicon PNP Power Transistor 2SA1942 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC5199 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RA

isc Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V =- 230V(Min) (BR)CEO Complement to Type 2SC5200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp

isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION Low Collector Saturation Voltage- V =- 2.0V(Min) @I =- 7A CE(sat) C Good Linearity of h FE Complement to Type 2SC5198 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app