2SA2065. Аналоги и основные параметры
Наименование производителя: 2SA2065
Маркировка: WK
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: TSM
Аналоги (замена) для 2SA2065
- подборⓘ биполярного транзистора по параметрам
2SA2065 даташит
..1. Size:194K toshiba
2sa2065.pdf 
2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage V = -0.14 V (max) CE (sat) High-speed switching t = 37 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteris
8.1. Size:169K toshiba
2sa2061.pdf 
2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (I = 0.5 A) C Low collector-emitter saturation voltage V = -0.19 V (max) CE (sat) High-speed switching t = 40 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristi
8.2. Size:201K toshiba
2sa2066.pdf 
2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (I = -0.2 A) C Low collector-emitter saturation voltage V = -0.19 V (max) CE (sat) High-speed switching t = 25 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit
8.3. Size:196K toshiba
2sa2069.pdf 
2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage V = -0.14 V (max) CE (sat) High-speed switching t = 37 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni
8.4. Size:158K toshiba
2sa2060.pdf 
2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteris
8.5. Size:29K sanyo
2sa2063 2sc5775.pdf 
Ordering number ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2063 / 2SC5775] 15.6 3.2 4.8 14.0 2
8.6. Size:29K sanyo
2sa2062 2sc5774.pdf 
Ordering number ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2062 / 2SC5774] 15.6 3.2 4.8 14.0
8.7. Size:78K panasonic
2sa2064.pdf 
Power Transistors 2SA2064 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for audio & visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High speed switching (tstg storage time/tf fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 1.6 0.2
8.9. Size:796K semtech
st2sa2060u.pdf 
ST 2SA2060U PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 2 A Collector Current (Pulse) -ICP 3.5 A Base Current -IB 200 mA 0.
8.10. Size:1040K kexin
2sa2061.pdf 
SMD Type Transistors PNP Transistors 2SA2061 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-2.5A 1 2 Collector Emitter Voltage VCEO=-20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Co
8.11. Size:1244K kexin
2sa2060.pdf 
SMD Type Transistors PNP Transistors 2SA2060 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V High-Speed Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Volt
8.12. Size:188K inchange semiconductor
2sa2062.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2062 DESCRIPTION Large current capacitance Wide ASO and high durability against breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 140V/10V,AF 70W output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
8.13. Size:189K inchange semiconductor
2sa2063.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2063 DESCRIPTION Large current capacitance Wide ASO and high durability against breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 160V/12V,AF 90W output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
Другие транзисторы: 2SA1986, 2SA1987, 2SA2034, 2SA2056, 2SA2058, 2SA2059, 2SA2060, 2SA2061, 2SC945, 2SA2066, 2SA2069, 2SA2070, 2SA2097, 2SA2120, 2SA2121, 2SA2142, 2SA2182
