2SC5171 - описание и поиск аналогов

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 2sc5171.pdf 

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO

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 2sc5171.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5171 DESCRIPTION High Transition Frenquency f =200MHz(Typ.) T Complementary to 2SA1930 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

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 2sc5171s.pdf 

2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features 2SA1930S(BR3CA1930SQ) High fT, complementary pair with 2SA1930S(BR3CA1930SQ). / Applications General power an

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 2sc5171i.pdf 

2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features 2SA1930I(BR3CA1930I) High fT, complementary pair with 2SA1930I(BR3CA1930I). / Applications General power and d

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 2sc5173.pdf 

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 2sc5174.pdf 

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 2sc5176.pdf 

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 2sc5172.pdf 

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 2sc5175.pdf 

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 2sc5177.pdf 

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain PACKAGE DIMENSIONS S21e 2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 0.2 Mini-Mold package 1.5 0.65+0.1 0.15 EIAJ

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 2sc5179.pdf 

DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS S21e 2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.1 0.1 Small Mini-Mold package 1.25 0.1 EIAJ SC-

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 2sc5178.pdf 

DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS S21e 2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units mm) S21e 2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 +0.2 0.3 4-pin Mini-Mold package 1.5 +

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 2sc5177.pdf 

SMD Type Transistors NPN Transistors 2SC5177 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=10mA 1 2 Collector Emitter Voltage VCEO=3V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect

 8.10. Size:184K  inchange semiconductor
 2sc5174.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5174 DESCRIPTION Silicon NPN epitaxial type Low Collector Saturation Voltage High transition frequency Complementary to 2SA1932 Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applicatio