2SC5930 - описание и поиск аналогов

2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.3 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collecto

FJAF6810A High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage BVCBO = 1550V High Switching Speed tF(typ.) =0.1 s For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Rating Units VCBO Collector-Base Vo

Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High transition frequency fT Small collector output capacitance (Common base, input open cir- cuited) Cob and reverse transfer capacitance (Common base) Crb 0.23+0.05 1 2 0.02 SSS-Mini type package, allo

Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification Unit mm 4.6 0.2 For TV vertical deflection output 9.9 0.3 2.9 0.2 Features 3.2 0.1 Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package 5 kV Full-pack package which can be installed to the heat sink with one screw.

Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 1 700 V High speed switching tf