Биполярный транзистор 2SC6040 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC6040
Маркировка: C6040
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 410 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: MSTM
2SC6040 Datasheet (PDF)
2sc6040.pdf
2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitC
2sc6042.pdf
2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.2 s (max) (IC = 0.3A) High breakdown voltage: VCES = 800 V, VCEO = 375 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitColle
2sc6043.pdf
Ordering number : ENN8326 2SC6043NPN Epitaxial Planar Silicon Transistors2SC6043High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Ra
2sc6044.pdf
Ordering number : ENN8251 2SC6044NPN Epitaxial Planar Silicon Transistors2SC6044High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching.SpecificationsAbsolute Maximum Ratin
2sc6046.pdf
2SC6046FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCEsat. 2.8 0.65 1.5 0.65FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCEsa
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050