2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 +0.2 1.6-0.1 High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) 1 High-speed switching: tf = 0.2 s (typ) 32 Absolute Maximum Ratings (Ta = 25C)

2SC6067 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 Medium Power Amplifier Applications Unit: mm Strobe Flash Applications Low Saturation Voltage: VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-Base voltage V 15 VCBO Collector-Emitter voltage V 10 VCEO Emitt

2SC6062 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6062 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Applications +0.2 1.6-0.1 High-DC current gain: hFE = 250 to 400 (IC = 0.5 1 A)Low-collector-emitter saturation: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) 32 Absolute Maximum Ratings (Ta

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High-transition frequency: fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO 5 VDC IC 1.0 ACollec