TTA0001 - описание и поиск аналогов

TTA0001 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 Power Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min.) Complementary to TTC0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V

TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 Power Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Complementary to TTC0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V

TTA004B Bipolar Transistors Silicon PNP Epitaxial Type TTA004B TTA004B TTA004B TTA004B 1. Applications 1. Applications 1. Applications 1. Applications Audio-Frequency Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance Cob = 17 pF (typ.) (4) High tran

TTA009 Bipolar Transistors Silicon PNP Epitaxial Type TTA009 TTA009 TTA009 TTA009 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) Low collector saturation voltage VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching tstg = 300 ns (typ.) (IC = -1

TTA008B Bipolar Transistors Silicon PNP Epitaxial Type TTA008B TTA008B TTA008B TTA008B 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage VCE(sat) = -0.5 V (max) (IC = -1A)

TTA003 Bipolar Transistors Silicon PNP Epitaxial Type TTA003 TTA003 TTA003 TTA003 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) Low collector saturation voltage VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching tstg = 300 ns (typ.) 3. Packa

TTA006B PNP TTA006B TTA006B TTA006B TTA006B 1. 1. 1. 1. 2. 2. 2. 2. (1) VCEO = -230 V ( ) (2) Cob = 30 pF ( ) (3)

TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 TTA005 TTA005 TTA005 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -

TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit mm High-Speed Switching Applications DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage VCE(sat) = -0.2 V (max) High-speed switching tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni