TTC003 - описание и поиск аналогов

TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit mm High-Speed Switching Applications DC-DC Converter Applications High DC current gain hFE = 400 to1000 (IC = 0.1 A) Low collector-emitter saturation voltage VCE(sat) = 0.12 V (max) High-speed switching tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

TTC005 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC005 TTC005 TTC005 TTC005 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = 0.1 A) (2) High-speed switc

TTC0001 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 Power Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Complementary to TTA0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Co

TTC004 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC004 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Complementary to TTA004 Small collector output capacitance Cob = 12 pF (typ.) High transition frequency fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Coll

TTC008 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC008 TTC008 TTC008 TTC008 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High collector-emitter voltage VCEO = 285 V, VCES = 600 V (2) High DC c

TTC004B Bipolar Transistors Silicon NPN Epitaxial Type TTC004B TTC004B TTC004B TTC004B 1. Applications 1. Applications 1. Applications 1. Applications Audio-Frequency Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = 160 V (min) (2) Complementary to TTA004B (3) Small collector output capacitance Cob = 12 pF (typ.) (4) High trans

TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 Power Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Complementary to TTA0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Col

TTC009 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 Power Amplifier Applications Unit mm Power Switching Applications Low collector-emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCE