Биполярный транзистор TTC007 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: TTC007
Маркировка: WG
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.7 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 400
Корпус транзистора: TSM
TTC007 Datasheet (PDF)
ttc007.pdf
TTC007 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC007 Unit: mmHigh-Speed Switching Applications DC-DC Converter Applications High DC current gain: hFE = 400 to1000 (IC = 0.1 A) Low collector-emitter saturation voltage: VCE(sat) = 0.12 V (max) High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit
ttc005.pdf
TTC005Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC005TTC005TTC005TTC0051. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A)(2) High-speed switc
ttc0001.pdf
TTC0001 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTA0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCo
ttc004.pdf
TTC004 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC004 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Complementary to TTA004 Small collector output capacitance : Cob = 12 pF (typ.) High transition frequency : fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitColl
ttc008.pdf
TTC008Bipolar Transistors Silicon NPN Triple-Diffused TypeTTC008TTC008TTC008TTC0081. Applications1. Applications1. Applications1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters2. Features2. Features2. Features2. Features(1) High collector-emitter voltage: VCEO = 285 V, VCES = 600 V(2) High DC c
ttc004b.pdf
TTC004BBipolar Transistors Silicon NPN Epitaxial TypeTTC004BTTC004BTTC004BTTC004B1. Applications1. Applications1. Applications1. Applications Audio-Frequency Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 160 V (min)(2) Complementary to TTA004B(3) Small collector output capacitance: Cob = 12 pF (typ.)(4) High trans
ttc0002.pdf
TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTA0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCol
ttc009.pdf
TTC009 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 Power Amplifier Applications Unit: mm Power Switching Applications Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCE
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050