2SD2462 - описание и поиск аналогов

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit mm High DC current gain hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C Low saturation voltage V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B Complementary to 2SB1602 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage

2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit mm High DC current gain hFE (1) = 800 to 3200 (V = 5 V, I = 0.1 A) CE C Low saturation voltage V = 0.3 V (typ.) (I = 0.5 A, I = 5 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter v

DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT mm) chip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as motors, relays, and solenoids. FE

Power Transistors 2SD2466, 2SD2466A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1604 Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Rat

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 1.27 1.27 C

Power Transistors 2SD2467 Silicon NPN epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 1.27 1.27 C

Power Transistors 2SD2465, 2SD2465A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1603 Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw Absolute Maximum Ratings (T

Power Transistors 2SD2468 Silicon NPN epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi

Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in-