2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2481 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Characteristics

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

Power Transistors2SD2486Silicon NPN triple diffusion planar typeFor power amplification with high forward current transfer ratioUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High forward current transfer ratio hFE which has satisfactorylinearity 3.1 0.1Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat si

100 Max200 A)100 Max200 V 6500-20000 (P) (Y). . .V V Max120 TY P 10 0

Inchange Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2488DESCRIPTIONWith TO-3PN packageDARLINGTONHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio ,regulator and general purposeAbsolute maximum ratings(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBO