2SD2526 - описание и поиск аналогов

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A) CE (sat) C Complementary to 2SB1641 Maximum Ratings (Ta = 25 C)

2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit mm High DC current gain 100 (min) Low saturation voltage V = 0.4 V (typ.) (I = 2 A, I = 0.2 A) CE (sat) C B Complementary to 2SB1640 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-em

Power Transistors 2SD2527 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6

Power Transistors 2SD2528 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 Ab

isc Silicon NPN Power Transistor 2SD2524 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER