Биполярный транзистор 50A02SS
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 50A02SS
Маркировка: XN
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.4
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 690
MHz
Ёмкость коллекторного перехода (Cc): 3.8
pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SSFP
Аналоги (замена) для 50A02SS
50A02SS
Datasheet (PDF)
..1. Size:29K sanyo
50a02ss.pdf 
Ordering number : ENN749150A02SSPNP Epitaxial Planar Silicon Transistor50A02SSLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive, muting circuit.2159A[50A02SS]Top View Side ViewFeatures1.4 Large current capacitance.0.10.25 Low collector-to-emitte
..2. Size:415K onsemi
50a02ss.pdf 
Ordering number : EN7491A50A02SSBipolar Transistorhttp://onsemi.com ( )50V, 0.4A, Low VCE sat PNP Single SSFPApplications Low-frequency Amplifier, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210m [IC=0.5A, IB=50mA] Ultrasmall package fac
9.1. Size:48K sanyo
50a02mh.pdf 
Ordering number : ENN748850A02MHPNP Epitaxial Planar Silicon Transistor50A02MHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive, muting circuit.2194A[50A02MH]0.3Features0.15 Large current capacitance.3 Low collector-to-emitter saturation voltage (
9.2. Size:34K sanyo
50a02ch.pdf 
Ordering number : ENN748750A02CHPNP Epitaxial Planar Silicon Transistor50A02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifier, high-speed switching,unit : mmsmall motor drive, muting circuit.2150A[50A02CH]Features2.90.150.4 Large current capacitance.3 Low collector-to-emitter saturation volt
9.3. Size:278K onsemi
50a02mh.pdf 
Ordering number : EN7488A50A02MHBipolar Transistorhttp://onsemi.com ( )50V, 0.5A, Low VCE sat PNP Single MCPH3Applications Low-frequency Amplifier, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=210m [IC=0.5A, IB=50mA] Small ON-resistance (Ro
9.4. Size:301K onsemi
50a02ch.pdf 
50A02CH Bipolar Transistor -50V, -0.5A, Low VCE(sat), PNP Single www.onsemi.com Features High Collector Current Capability Low Collector to Emitter Saturation Voltage (Resistance): RCE(sat) typ=210m [IC=0.5A, IB=50mA] ELECTRICAL CONNECTION Low ON-Resistance (Ron) Pb-Free, Halogen Free and RoHS compliance 31: Base1 2 : EmitterTypical Applications 3
9.5. Size:464K onsemi
50a02ch 50a02ch.pdf 
Ordering number : EN7487B50A02CHBipolar Transistorhttp://onsemi.com ( )50V, 0.5A, Low VCE sat PNP Single CPH3Applications Low-frequency Amplifier, high-speed switching, small motor drive, muting circuitFeatures High collector current capability Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210m [IC=0.5A, IB=50mA] Low ON-res
9.6. Size:821K cn hunteck
htm150a02.pdf 
HTM150A02P-120V Dual N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level13RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness7 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and InductrialPart Number Package MarkingPin 1HTM150A02
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