Биполярный транзистор 50C02SS - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 50C02SS
Маркировка: YN
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 500 MHz
Ёмкость коллекторного перехода (Cc): 2.8 pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SSFP
50C02SS Datasheet (PDF)
50c02ss.pdf
Ordering number : ENN751950C02SSNPN Epitaxial Planar Silicon Transistor50C02SSLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2159A[50C02SS]FeaturesTop View Side View Large current capacitance.1.4 Low collector-to-emitter saturation
50c02ss.pdf
Ordering number : EN7519A50C02SSBipolar Transistorhttp://onsemi.com( )50V, 0.4A, Low VCE sat NPN Single SSFPApplications Low-frequency Amplifer, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175m [IC=0.5A, IB=50mA] Ultrasmall package facilitates
50c02ch.pdf
Ordering number : ENN751550C02CHNPN Epitaxial Planar Silicon Transistor50C02CHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2150A[50C02CH]Features Large current capacitance.2.90.150.4 Low collector-to-emitter saturation voltage
50c02mh.pdf
Ordering number : ENN751650C02MHNPN Epitaxial Planar Silicon Transistor50C02MHLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplicationsPackage Dimensions Low-frequency Amplifer, high-speed switching,unit : mmsmall motor drive, muting circuit.2194A[50C02MH]Features0.30.15 Large current capacitance.3 Low collector-to-emitter saturation voltage (r
50c02ch.pdf
50C02CH Bipolar Transistor 50V, 0.5A, Low VCE(sat), NPN Single www.onsemi.com Features Large Current Capacitance Low Collector to Emitter Saturation Voltage (Resistance): RCE(sat) typ=175m [IC=0.5A, IB=50mA] ELECTRICAL CONNECTION Ultrasmall Package Facilitates Miniaturization in End Products Small ON-Resistance (Ron) 31: Base1 2 : EmitterTypical Appl
50c02mh.pdf
Ordering number : EN7516A50C02MHBipolar Transistorhttp://onsemi.com( )50V, 0.5A, Low VCE sat NPN Single MCPH3Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuitFeatures Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175m [IC=0.5A, IB=50mA] Ultrasmall package facilitates
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
