CEquivalent circuitBDarlington 2SD2643(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO

Ordering number : ENN6679A2SD2649NPN Triple Diffused Planar Silicon Transistor2SD2649Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2649] Adoption of MBIT process. 5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Ordering number : ENN69222SD2646NPN Triple Diffused Planar Silicon Transistor2SD2646Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2646] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Ordering number : ENN6897A2SD2645NPN Triple Diffused Planar Silicon Transistor2SD2645Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2645] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number : ENN69232SD2648NPN Triple Diffused Planar Silicon Transistor2SD2648Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2648] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

CEquivalent circuitBDarlington 2SD2642(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c0.5VCBO 110 ICB

Equivalent circuitCBDarlington 2SD2641(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)RatingsSymbol Ratings Symbol Conditions UnitUnit0.24.80.415.6100max AVCB

isc Silicon NPN Darlington Power Transistor 2SD2642DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1687Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2645DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT