2SC4468 - описание и поиск аналогов

JMnic Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit 0.2 4.8 0.4 15.6 VCBO 200 V ICBO VCB=200V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB=6V 10max

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDIT

Ordering number EN3332 NPN Triple Diffused Planar Silicon Transistor 2SC4461 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4461] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base

Ordering number EN3331 NPN Triple Diffused Planar Silicon Transistor 2SC4460 500V/15A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2039D Wide ASO. [2SC4460] Adoption of MBIT process. 16.0 5.6 3.4 Micaless package facilitating mounting. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base

UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an

UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable

2SC4462 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4462 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100 mW Junction temper

2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temper

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4460 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. Fast switching speed. Wide ASO. APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25 ) SYMB

JMnic Product Specification Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

JMnic Product Specification Silicon NPN Power Transistors 2SC4466 DESCRIPTION With TO-3PN package Complement to type 2SA1693 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit 0.2 4.8 0.4 15.6 0.1 VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0 IEBO VCEO 120 V VEB=6V 10max

2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4466 Symbol Conditions 2SC4466 Unit Unit 0.2 4.8 0.4 15.6 0.1 VCBO 120 ICBO VCB=120V 10max A 9.6 2.0 V VCEO 80 IEBO VEB=6V 10max A

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UN

isc Silicon NPN Power Transistor 2SC4461 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

isc Silicon NPN Power Transistor 2SC4460 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CEO Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4467 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1694 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MA

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4466 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1693 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAX