JMnic Product SpecificationSilicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV

2SC4468Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC4468 Unit Symbol Conditions 2SC4468 Unit0.24.80.415.6VCBO 200 V ICBO VCB=200V 10max A0.19.6 2.0VCEO 140 VIEBO VEB=6V 10max

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4468 DESCRIPTION With TO-3PN package Complement to type 2SA1695 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDIT

Ordering number:EN3332NPN Triple Diffused Planar Silicon Transistor2SC4461500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4461] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base

Ordering number:EN3331NPN Triple Diffused Planar Silicon Transistor2SC4460500V/15A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2039D Wide ASO.[2SC4460] Adoption of MBIT process.16.05.63.4 Micaless package facilitating mounting. 3.12.82.0 2.01.00.61 : Base

UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an

UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable

2SC4462Silicon NPN EpitaxialApplicationUHF frequency converterOutlineCMPAK311. Emitter2. Base23. Collector2SC4462Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJunction temper

2SC4463Silicon NPN EpitaxialApplicationUHF frequency converterOutlineCMPAK311. Emitter2. Base23. Collector2SC4463Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 100 mWJunction temper

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4460 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. Fast switching speed. Wide ASO. APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25) SYMB

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4466 DESCRIPTION With TO-3PN package Complement to type 2SA1693 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SC4467Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit0.24.80.415.60.1VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0IEBOVCEO 120 V VEB=6V 10max

2SC4466Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4466 Symbol Conditions 2SC4466 UnitUnit0.24.80.415.60.1VCBO 120 ICBO VCB=120V 10max A 9.6 2.0VVCEO 80 IEBO VEB=6V 10max A

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTIONWith TO-3PN packageComplement to type 2SA1694APPLICATIONS Audio and general purposePINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UN

isc Silicon NPN Power Transistor 2SC4461DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CEOFast Switching speedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon NPN Power Transistor 2SC4460DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CEOFast Switching speedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4467DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1694100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4466DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1693100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAX