2SC4706 - описание и поиск аналогов

JMnic Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit 0.2 4.8 0.4 15.6 VCBO 900 V ICBO VCB=800V 100max A 0.1 9.6 2.0 VCEO 600 V

isc Silicon NPN Power Transistor 2SC4706 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 600V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

Ordering number EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications Package Dimensions Low-frequency general-purpose amplifier, drivers, unit mm muting circuits. 2038A [2SC4705] Features 4.5 1.5 1.6 High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage VCE

Ordering number EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit mm Small Cob (Cob typ=1.3pF). 2010C Wide ASO. [2SC4709] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Co

DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface

2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO

SMD Type Transistors NPN Transistors 2SC4705 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

SMD Type Transistors NPN Transistors 2SC4703 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

SMD Type Transistors NPN Transistors 2SC4702 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Colle

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4703 DESCRIPTION Low Distortion at Low Supply Voltage. IM 55 dB TYP., IM 76 dB TYP. 2- 3- @V = 5 V, I = 50 mA, V = 105dB /75 CE C O 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low distortion ,low noise RF amplifier operating with