JMnic Product SpecificationSilicon NPN Power Transistors 2SC4706 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

2SC4706Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4706 Unit Symbol Conditions 2SC4706 Unit0.24.80.415.6VCBO 900 V ICBO VCB=800V 100max A 0.19.6 2.0VCEO 600 V

isc Silicon NPN Power Transistor 2SC4706DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 600V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Ordering number:EN3484NPN Epitaxial Planar Silicon Transistor2SC4705Low-Frequency General-Purpose Amplifier,Applications (High hFE)Applications Package Dimensions Low-frequency general-purpose amplifier, drivers,unit:mmmuting circuits.2038A[2SC4705]Features 4.51.51.6 High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage :VCE

Ordering number:EN3687NPN Triple Diffused Planar Silicon Transistor2SC4709High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=2100V).unit:mm Small Cob (Cob typ=1.3pF).2010C Wide ASO.[2SC4709] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Co

Preliminary Datasheet R07DS0275EJ04002SC4702 (Previous: REJ03G0729-0300)Rev.4.00Silicon NPN Epitaxial Mar 28, 2011Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Note: Marking is XV

DATA SHEETNPN SILICON RF TRANSISTOR2SC4703NPN EPITAXIAL SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW DISTORTION AMPLIFIER3-PIN POWER MINIMOLDDESCRIPTIONThe 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface

2SC4702Silicon NPN EpitaxialApplicationHigh voltage amplifierFeatures High breakdown voltageVCEO = 300 V Small CobCob = 1.5 pF Typ.OutlineMPAK311. Emitter2. Base23. Collector2SC4702Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO

SMD Type TransistorsNPN Transistors2SC4705SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC4703SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

SMD Type TransistorsNPN Transistors2SC4702SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=300V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Colle

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4703DESCRIPTIONLow Distortion at Low Supply Voltage.IM 55 dB TYP., IM 76 dB TYP.2-3-@V = 5 V, I = 50 mA, V = 105dB/75CE C O100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low distortion ,low noise RF amplifier operatingwith