Справочник транзисторов. 2SC5101

 

Биполярный транзистор 2SC5101 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC5101
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Статический коэффициент передачи тока (hfe): 50
   Корпус транзистора: TO3PF

 Аналоги (замена) для 2SC5101

 

 

2SC5101 Datasheet (PDF)

 ..1. Size:188K  jmnic
2sc5101.pdf

2SC5101 2SC5101

JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

 ..2. Size:25K  sanken-ele
2sc5101.pdf

2SC5101

2SC5101Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit0.20.2 5.515.60.23.45VCBO 200 V ICBO VCB=200V 10max AVCEO 140 V IEBO VEB=6V 10max AV

 ..3. Size:195K  inchange semiconductor
2sc5101.pdf

2SC5101 2SC5101

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5101DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1909100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM

 8.2. Size:120K  1
2sc510 2sc512.pdf

2SC5101 2SC5101

 8.3. Size:133K  toshiba
2sc5108ft.pdf

2SC5101 2SC5101

2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction tempera

 8.4. Size:242K  toshiba
2sc5109.pdf

2SC5101 2SC5101

2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 150 mWJunction temperature

 8.5. Size:242K  toshiba
2sc5108.pdf

2SC5101 2SC5101

2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature

 8.6. Size:241K  toshiba
2sc5107.pdf

2SC5101 2SC5101

2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature

 8.7. Size:238K  toshiba
2sc5106.pdf

2SC5101 2SC5101

2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 150 mWJunction temperature

 8.8. Size:53K  rohm
2sc5103.pdf

2SC5101 2SC5101

2SC5103TransistorsHigh speed switching transistor (60V, 5A)2SC5103 External dimensions (Units : mm) Features1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)2) High speed switching (tf : Typ. 0.1 s at IC = 3A)5.5 1.53) Wide SOA. (safe operating area)0.94) Complements the 2SA1952.C0.50.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5(3) Emitt

 8.9. Size:62K  panasonic
2sc5104.pdf

2SC5101 2SC5101

Power Transistors2SC5104Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features1.5max. 1.1max.High-speed switchingHigh collector to base voltage VCBO0.8 0.1 0.5max.Wide area of safe operation (ASO)2.54 0.3Satisfactory linearity of foward current transfer ratio hFE5.08 0.5N

 8.10. Size:188K  jmnic
2sc5100.pdf

2SC5101 2SC5101

JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

 8.11. Size:24K  sanken-ele
2sc5100.pdf

2SC5101

2SC5100Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)2SC5100 UnitSymbol 2SC5100 Unit Symbol Conditions0.20.2 5.515.60.23.4510max AVCBO 160 V ICBO VCB=160VVCEO 120 V VEB=6VIEBO 10max A

 8.12. Size:1076K  kexin
2sc5109.pdf

2SC5101 2SC5101

SMD Type TransistorsNPN Transistors2SC5109SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

 8.13. Size:1250K  kexin
2sc5106.pdf

2SC5101 2SC5101

SMD Type TransistorsNPN Transistors2SC5106SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V +0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector

 8.14. Size:195K  inchange semiconductor
2sc5100.pdf

2SC5101 2SC5101

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5100DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1908100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM

 8.15. Size:210K  inchange semiconductor
2sc5103.pdf

2SC5101 2SC5101

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5103DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation VoltageComplement to Type 2SA1952Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

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