Биполярный транзистор 2SC5101 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5101
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO3PF
2SC5101 Datasheet (PDF)
2sc5101.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sc5101.pdf
2SC5101Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit0.20.2 5.515.60.23.45VCBO 200 V ICBO VCB=200V 10max AVCEO 140 V IEBO VEB=6V 10max AV
2sc5101.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5101DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1909100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5108ft.pdf
2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction tempera
2sc5109.pdf
2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 30 mACollector current IC 60 mACollector power dissipation PC 150 mWJunction temperature
2sc5108.pdf
2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature
2sc5107.pdf
2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 100 mWJunction temperature
2sc5106.pdf
2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 3 VBase current IB 15 mACollector current IC 30 mACollector power dissipation PC 150 mWJunction temperature
2sc5103.pdf
2SC5103TransistorsHigh speed switching transistor (60V, 5A)2SC5103 External dimensions (Units : mm) Features1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A)2) High speed switching (tf : Typ. 0.1 s at IC = 3A)5.5 1.53) Wide SOA. (safe operating area)0.94) Complements the 2SA1952.C0.50.8Min.(1) Base(Gate)1.52.5 (2) Collector(Drain)ROHM : CPT39.5(3) Emitt
2sc5104.pdf
Power Transistors2SC5104Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features1.5max. 1.1max.High-speed switchingHigh collector to base voltage VCBO0.8 0.1 0.5max.Wide area of safe operation (ASO)2.54 0.3Satisfactory linearity of foward current transfer ratio hFE5.08 0.5N
2sc5100.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta
2sc5100.pdf
2SC5100Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)2SC5100 UnitSymbol 2SC5100 Unit Symbol Conditions0.20.2 5.515.60.23.4510max AVCBO 160 V ICBO VCB=160VVCEO 120 V VEB=6VIEBO 10max A
2sc5109.pdf
SMD Type TransistorsNPN Transistors2SC5109SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc5106.pdf
SMD Type TransistorsNPN Transistors2SC5106SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=10V +0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector
2sc5100.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5100DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1908100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM
2sc5103.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5103DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation VoltageComplement to Type 2SA1952Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050