2SA1834TransistorsTransistors2SC5001(96-106-B217)(96-193-D217)292Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

2SA1834 Transistors Low VCE(sat) Transistor (Strobe flash) (-20V, -10A) 2SA1834 External dimentions (Unit : mm) Features 1) Low saturation voltage, CPT36.55.1typically VCE(sat) = -0.16V at IC / IB= -4A / -50mA. 2.30.52) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SC5001. 0.75 Packaging specif

2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -50 V High current: I = -150 mA (max) C High h : h = 120 to 400 FE FE Excellent h linearity FE: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Absolute Maximum

2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE: hFE = 120~400 Complementary to 2SC4738F Small package Ma

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Complementary to 2SC4738 Small package Absolute Maximum

2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 70 MHz (typ.) Complementary to 2SC4793 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VCollector-emitter voltage VCEO -230 VEmitter-base vo

Ordering number:EN4665PNP Epitaxial Planar Silicon Transistor2SA1838Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1838-unit:mmapplied sets to be made small and slim.2059A Small output capacitance.[2SA1838] Low collector-to-emitter saturation voltage. Low ON resistance.1 : Base2 : Emitter3 : CollectorSANY

Ordering number:EN4666PNP Epitaxial Planar Silicon Transistor2SA1839Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1839-unit:mmapplied sets to be made small and slim.2018B Small output capacitance.[2SA1839] Low collector-to-emitter saturation voltage. Low ON resistance.1 : Base2 :Emitter3 : CollectorSANYO

Ordering number:EN3686APNPTriple Diffused Planar Silicon Transistors2SA1831High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=800V).unit:mm Small Cob (Cob typ=1.6pF).2010B High reliabirity (Adoption of HVP processes).[2SA1831]JEDEC : TO-220AB E : EmitterEIAJ : SC-46 C : CollectorB : Base

DATA SHEETPNP SILICON EPITAXIAL TRANSISTOR2SA1836PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.3 +0.1 0.15+0.10 0.05FEATURES High DC current gain: hFE2 = 200 TYP. 30 to 0.1 High voltage: VCEO = -50 V Can be automatically mounted 2 10.2+0.10ORDERING INFORMATION 0.6

MCC2SA1832-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1832-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meets UL 94 V-

MCC2SA1832-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SA1832-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting:any position Epoxy meets UL 94 V-

UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 32SA1837L-TF3-T 2SA1837G-TF3-T TO-220F B C E Tube

2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523FEATURES High Voltage and High Current A Excellent hFE Linearity M Complementary to 2SC4738 33Top View C BCLASSIFICATION OF hFE 11 2L 2Product-Rank 2SA1832-Y 2SA1832-GR KE

JMnic Product Specification Silicon PNP Power Transistors 2SA1837 DESCRIPTION With TO-220F package Complement to type 2SC4793 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25

2SA1832PNP TRANSISTOR3P b Lead(Pb)-Free12FEATURES:* High voltage and high current* Excellent hFE linearitySOT-523(SC-75)* Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBOCollector-Base Voltage -50 V VCEOCollector-Emitter Voltage -50 V VEBOEmitter-Base Voltage -5 V ICCollector Current Continuous

PNP PNP Epitaxial Silicon Transistor R 2SA1837 APPLICATIONS Power Amplifier Applications FEATURES V =-230V (min) High collector voltage V =-230V (min) CEOCEO 2SC4793 Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) f T=70MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Marking Ha

RoHS RoHS 2SA1837AFSEMICONDUCTORNell High Power ProductsHigh Frequency PNP Power Transistor-1A/-230V/20WFEATURESHigh transition frequency:fT = 70MHz (typ.)Complementary to 2SC4793AFBCTO-220F package which can be Einstalled to the heat sink with one screwTO-220F (2SA1837AF) APPLICATIONSPower amplifier(2)CDriver stage amplifier B(1)PNPE(3)ABSO

SMD Type TransistorsPNP Transistors2SA1832SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features High voltage and high current Excellent hFE linearity3 Complementary to 2SC47380.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

SMD Type TransistorsPNP Transistors2SA1839SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.1 Features 3 Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance. 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

DIP Type TransistorsTransistorsPNP Transistors2SA1837TO-220MF Units:mm Features High collector voltageVCEO=-230V (min) Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -230 Collector - Emitter Voltage VCEO -230 V Emit

2SA1837 PNP PNP Epitaxial Silicon Transistor APPLICATIONS Power Amplifier Applications FEATURES VCEO=-230V (min) High collector voltageVCEO=-230V (min) 2SC4793 Complementa

Silicon PNP transistorPower Amplifier Applications Complementary to 2SC4793 High collector voltage:VCEO=-230V (min)Note: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operati

2SA1837Minos Silicon PNP Epitaxial Type2SA1837Power Amplifier ApplicationsComplementaryto 2SC4793Highcollector voltage:VCEO=-230V (min)Note: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis product todecrease inthereliability significantly even if the operating conditions (i.e

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1837DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SC4793Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE