Биполярный транзистор 2SC5661 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5661
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1500 MHz
Ёмкость коллекторного перехода (Cc): 0.9 pf
Статический коэффициент передачи тока (hfe): 56
Корпус транзистора: SC-105AA VMT3 SOT723
2SC5661 Datasheet (PDF)
2sc4725 2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage
2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage
2sc5665.pdf
Ordering number : ENN73512SC5665NPN Epitaxial Planar Silicon Transistor2SC5665High-Frequency Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2106A: fT=11.2GHz typ (VCE=3V).[2SC5665] Low operating voltage.0.750.30.630~0.11 20.10.20.
2sa2031 2sc5669.pdf
Ordering number : ENN65862SA2031 / 2SC5669PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2031 / 2SC5669230V / 15A, AF100W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2031 / 2SC5669]15.63.24.814.0
2sc5668.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5668NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f
2sc5667.pdf
DATA SHEETNPN SILICON RF TRANSISTOR2SC5667NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION3-PIN ULTRA SUPER MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V,
2sc5662.pdf
2SC5662DatasheetHigh-frequency Amplifier Transistor (11V, 50mA, 3.2GHz)lOutlinel SOT-723 Parameter Value SC-105AA VCEO11VIC50mAVMT3 lFeatures lInner circuitl l1)High transition frequency.(Typ.fT=3.2GHz)2)Small rbb'Cc and high gain.(Typ.4ps)3)Small NF.lApplicationlHIGH
2sc5663 2sc5585.pdf
2SC5663 / 2SC5585 DatasheetLow frequency transistor (12V, 500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO12VIC500mA 2SC5663 2SC5585(VMT3) (EMT3)lFeatures l 1)High current2)Low VCE(sat).VCE(sat)250mV at IC=200mA/IB=10mAlApplicationlLOW FREQUENCY
2sc5585 2sc5663.pdf
2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit : mm) Applications For switching 2SC5585For muting (1)(2)(3)0.8 Features 1.61) High current. 2) Low VCE(sat). 0.1Min.(1) Emitter
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and
2sc5669.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION With TO-3PN package Complement to type 2SA2031 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
2sc5663gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SC5663GPSURFACE MOUNT Low Ferquency NPN Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURESOT-723* Small surface mounting type. (SOT-723)* High current* Collector saturation voltage is low.VCE(sat)
2sc5663tgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SC5663TGPSURFACE MOUNT Low Ferquency NPN Transistor VOLTAGE 12 Volts CURRENT 0.5 AmpereAPPLICATION* For switching,for muting.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current* Collector saturation voltage is low.VCE(sat)
2sc5669.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION With TO-3PN package Complement to type 2SA2031 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute ma
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050