2SC5866 - описание и поиск аналогов

2SC5866 Datasheet Medium power transistor (60V, 2A) lOutline l Parameter Value TSMT3 VCEO 60V IC 2A SOT-346T SC-96 lFeatures l 1)High speed switching. lInner circuit l (tf Typ. 35ns at IC=2A) 2)Low saturation voltage, typically (Typ. 200mV at IC=1.0A, IB=100mA) 3)Storong discharge power for indu

Medium power transistor (60V, 0.5A) 2SC5868 Features Dimensions (Unit mm) 1) High speed switching. TSMT3 2.8 (Tf Typ. 80ns at IC = 500mA) 1.6 2) Low saturation voltage, typically (Typ. 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 (1) Base (2) Emitter 0.3 0.6 Each lead has sam

High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 Features Dimensions (Unit mm) 1) High speed switching. ( Tf Typ. 50ns at IC = 1.0A) TSMT3 1.0MAX 2) Low saturation voltage, typically. 2.9 0.85 (Typ. 200mV at IC = 500mA, IB = 50mA) 0.4 0.7 3) Strong discharge power for inductive load and ( ) 3 capacitance load. 4) Low Noise. 5) Co

Transistors 2SC5863 Silicon NPN epitaxial planar type Unit mm For general amplification 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High collector-emitter voltage (Base open) VCEO 1 2 High transition frequency fT (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25 C 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter