Биполярный транзистор 2SCR543R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SCR543R
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: TSMT3
2SCR543R Datasheet (PDF)
2scr543r.pdf
2SCR543RDatasheetNPN 3.0A 50V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO50VIC3ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Transistor2) Complementary PNP Types:2SAR543R3) Low saturation voltage, typicallyVCE(sat)=350mV(Max.)(IC/IB=2A/100mA)lApplicationlLOW FREQUEN
2scr543d.pdf
Midium Power Transistors (50V / 4A) 2SCR543D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.35V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDri
2scr542d.pdf
Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT3 (SC-63) Features1) Low saturation voltageVCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA)2) High speed switching 9(1) Base Applications(2) Collector (3) EmitterDriv
2scr544p.pdf
Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NSDriver Packaging specifications Inner circuit (Unit : mm)Package Taping
2scr544r.pdf
2SCR544RDatasheetNPN 2.5A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC2.5ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR544R3)Low VCE(sat)VCE(sat)=300mV(Max.)(IC/IB=1A/50mA)lApplicationlLOW FREQU
2scr544p5.pdf
2SCR544P5DatasheetMidium Power Transistors (80V / 2.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC2.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/ IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi
2scr542pfra.pdf
2SCR542PFRA2SCR542P Data SheetNPN 5.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBaseIC Collector5.0AEmitter2SCR542PFRA2SCR542PlFeatures(SC-62)1) Suitable for Middle Power Driver2SAR542PFRA2) Complementary PNP Types : 2SAR542P3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=2A/100mA)4) Lead Free/RoHS Compliant
2scr542f3.pdf
2SCR542F3DatasheetNPN 3.0A 30V Middle Power TransistorlOutlinelParameter Value HUML2020L3VCEO30VIC3A2SCR542F3 lFeaturesllInner circuitl1) Suitable for Middle Power Driver.2) Low VCE(sat)VCE(sat)=0.20V(Max.).(IC/IB=1A/50mA)3) High collector current.IC=3A(max),ICP=6A(m
2scr544d.pdf
Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT36.55.12.30.5 Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)0.752) High speed switching0.650.92.32.3(1) (2) (3)0.51.0 ApplicationsDriver Packaging specifications Inner
2scr542p.pdf
2SCR542PDatasheetMiddle Power Transistor (30V / 5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=400mV(Max.)(IC/IB=2A/100mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specification
2scr544pfra.pdf
2SCR544P2SCR544PFRAData SheetNPN 2.5A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBaseCollectorIC2.5AEmitter2SCR544PFRA2SCR544PlFeatures(SC-62)1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR544P 2SAR544PFRA3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=1A/50mA)4) Lead Free/RoHS Compliant
2scr542d.pdf
isc Silicon NPN Power Transistors 2SCR542DDESCRIPTIONDC Current Gain h :200-500@ I = 0.5AFE CCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
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