2SD2391 - описание и поиск аналогов

2SD2391 Datasheet Middle Power Transistor (60V / 2A) lOutline l SOT-89 Parameter Value SC-62 VCEO 60V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, tipically VCE(sat)=130mV at IC/IB=1A/50mA. 2)Collector-emitter voltage=60V 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). 4)Complementary PNP Types 2SB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low VCE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

SMD Type Transistors NPN Transistors 2SD2391 1.70 0.1 Features Low saturation voltage Collector-emitter voltage =60V 0.42 0.1 Pc = 2W (on 40X40X0.7mm ceramic board). 0.46 0.1 Complements the 2SB1561. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Volt

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Peak Collector Current (PW = 10 ms) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 1) Junction Temperature Tj 150 Storage Temperatu

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

2SB1566 Transistors Transistors 2SD2395 (94L-459-B350) (94L-1101-D350) 296

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)

2SD2396 Transistors Transistors 2SC5060 (96-819-D351) (96-733-D416) 323

2SD2394 Transistors Power Transistor (60V, 3A) 2SD2394 Features External dimensions (Units mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 10.0 4.5 3.2 2.8 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) ( ) (1) (2) (3) (3) Emit

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2396 TRANSISTOR (NPN) FEATURES Available in TO-220 F package Darling connection provides high dc current gain (hFE) 1 2 1. BASE 3 Large collector power dissipation Low frequency and Power amplifier 2. COLLECTOR 3. EMITTER Equivalent Circuit 2SD2396=D

C Equivalent circuit B Darlington 2SD2390 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2390 Unit Symbol Conditions 2SD2390 Unit 0.2 4.8 0.4 15.6 VCBO 160 V ICBO VC

2SD2395(3DA2395) NPN /SILICON NPN TRANSISTOR , Purpose Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier. , , 2SB1566(3CA1566) Features Low V ,wide SOA, complements the 2SB1566(3

isc Silicon NPN Darlington Power Transistor 2SD2399 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low fr

isc Silicon NPN Power Transistor 2SD2395 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1566 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon NPN Darlington Power Transistor 2SD2390 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 7A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 7A CE(sat) C Complement to Type 2SB1560 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2397 DESCRIPTION High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Built-in zener diode between collector and base Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor Relay drive ABS

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2398 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor R

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2396 DESCRIPTION Low Collector Saturation Voltage High DC current gain Large collector power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon NPN Power Transistor 2SD2394 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and driver applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a