Биполярный транзистор 2SD2675
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2675
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 320
MHz
Ёмкость коллекторного перехода (Cc): 7
pf
Статический коэффициент передачи тока (hfe): 270
Корпус транзистора:
TSMT3
2SD2675
Datasheet (PDF)
..1. Size:67K rohm
2sd2675.pdf 
2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit : mm) Application Low frequency amplifier TSMT31.0MAX2.90.85 Features 0.70.4(3)1) A collector current is large. 2) Collector saturation voltage is low. 1 2VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 500mA / IB = 25mA 1.9(1) Base(2) EmitterEach lead
8.1. Size:59K rohm
2sd2670.pdf 
2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7( )3 Features 1) A collector current is large. ( ) ( )1 22) VCE(sat) : max.250mV 0.95 0.950.16 At lc=1.5A / lB=30mA 1.9(1) Base(2) EmitterEach lead has same dimensions (3) Collector Abso
8.2. Size:66K rohm
2sd2671.pdf 
2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7( )3 Features 1) A collector current is large. 2) VCE(sat) : max. 370mV (1) (2)0.95 0.95 At lc=1.5A / lB=75mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Absolute maxi
8.3. Size:76K rohm
2sd2678.pdf 
2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XXNPN epitaxial planar silicon transistor
8.4. Size:89K rohm
2sd2672.pdf 
2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( )1 20.95 0.95At IC = 2A / IB = 40mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Pac
8.5. Size:67K rohm
2sd2673.pdf 
2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7(3) Features 1) A collector current is large. (3A) ( ) ( )2) VCE(sat) : max. 250mV 1 20.95 0.950.16At IC = 1.5A / IB = 30mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector P
8.6. Size:1004K rohm
2sd2674.pdf 
2SD2674DatasheetGeneral purpose amplification (12V, 1.5A)lOutlinel SOT-346T Parameter Value SC-96 VCEO12VIC1.5ATSMT3lFeatures lInner circuitl l1)A collector current is large.2)Collector saturation voltage is low. VCE(sat)200mV at IC=500mA/IB=25mAlApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificat
8.7. Size:116K rohm
2sd2679.pdf 
2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XZNPN epitaxial planar silicon transistor
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