2SD2696DatasheetLow frequency transistor (for amplification)lOutlinelParameter Value VMT3VCEO30VIC400mASOT-723SC-105AA lFeaturesl1)The transistor of 400mA class which went onlylInner circuitlwith 2012 size conventionally is attained in1208 size.2)Collector saturation voltage is low

2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2695 Micro Motor Drive, Hammer Drive Applications Unit: mmSwitching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Zener diode included between collector

2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit: mmHigh-Power Switching Applications High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage

2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit: mmMotor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-em

2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit: mm High Speed Switching Applications. High voltage: VCBO = 1700 V Low saturation voltage: V = 5 V (max) CE (sat) High speed: t = 0.8 s (max) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector

Ordering number : ENN75272SD2689LSNPN Triple Diffused Planar Silicon Transistor2SD2689LSColor TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process).[2SD2689LS] Adoption of MBIT process.10.0 4.53.22.80.91.2 1.20.75 0.71 : Base

Ordering number : ENN6679A2SD2649NPN Triple Diffused Planar Silicon Transistor2SD2649Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2649] Adoption of MBIT process. 5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Ordering number : ENN64782SD2627NPN Triple Diffused Planar Silicon Transistor2SD2627Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20

Ordering number : ENN69222SD2646NPN Triple Diffused Planar Silicon Transistor2SD2646Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2646] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Ordering number : ENN75262SD2688LSNPN Triple Diffused Planar Silicon Transistor2SD2688LSColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2079D High reliability(Adoption of HVP process).[2SD2688LS] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.9

Ordering number : ENN69602SB1683 / 2SD26392SB1683 : PNP Epitaxial Planar Silicon Transistor2SD2639 : NPN Triple Diffused Planar Silicon Transistor2SB1683 / 2SD2639140V / 12A, AF 60W Output ApplicationsFeaturesPackage Dimensions Wide ASO because of on-chip ballast resistance.unit : mm Good dependence of fT on current and good HF2010Ccharacteristic.[2SB1683 / 2SD26

Ordering number : ENN73802SB1700 / 2SD2663PNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB1700 / 2SD2663Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit : mmvoltage regulator control. 2042B[2SB1700 / 2SD2663]8.0Features4.03.31.0 1.0 High DC current gain. Large current capacity and wide

Ordering number : ENN6897A2SD2645NPN Triple Diffused Planar Silicon Transistor2SD2645Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2645] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number : ENN6500A2SD2624NPN Triple Diffused Planar Silicon Transistor2SD2624Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2624] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number:ENN6352NPN Triple Diffused Planar Silicon Transistor2SD2629Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1500V).2079C High reliability (Adoption of HVP process).[2SD2629] Adoption of MBIT process.4.510.02.8 On-chip damper diode.3.20.91.20.70.75

Ordering number : ENN6474B2SD2634NPN Triple Diffused Planar Silicon Transistor2SD2634Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2634] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0

Ordering number : ENN6478A2SD2627LSNPN Triple Diffused Planar Silicon Transistor2SD2627LSColor TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process).[2SD2627] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.91.

Ordering number:ENN6449NPN Epitaxial Planar Silicon Darlington Transistor2SD2635120V / 2A Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit:mm2064AFeatures [2SD2635]2.5 Darlington connection1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature.0.60.9 0.51 2 30.451 :

Ordering number : ENN6781A2SD2650NPN Triple Diffused Planar Silicon Transistor2SD2650Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2650] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Ba

Ordering number : ENN71682SD2658LSNPN Triple Diffused Planar Silicon Transistor2SD2658LSColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1500V).2079D High reliability (Adoption of HVP process).[2SD2658LS] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0

Ordering number : ENN69232SD2648NPN Triple Diffused Planar Silicon Transistor2SD2648Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2648] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas

Preliminary Datasheet 2SD2655 R07DS0281EJ0300(Previous: REJ03G0810-0200)Silicon NPN Epitaxial Planer Rev.3.00Low Frequency Power Amplifier Mar 28, 2011Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW

2SD2653 Transistors Low frequency amplifier 2SD2653 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7( )3 Features 1) A collector current is large. 2) VCE(sat) 180mV ( ) ( )1 20.95 0.95at IC = 1A / IB = 50mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Absolute m

2SD2652TransistorsGeneral purpose amplification (12V, 1.5A)2SD2652 External dimensions (Units : mm) ApplicationLow frequency amplifier Features1.251) A collector current is large.2.12) Collector saturation voltage is low.VCE(sat) 200mV0.1Min.At IC = 500mA / IB = 25mAEach lead has same dimensionsROHM : UMT3 (1) EmitterAbbreviated symbol : EWEIAJ : SC-70 (2

2SD26562SD2656FRADatasheet NPN 1A 30V Low Frequency Amplifier TransistorsAEC-Q101 QualifiedlOutlineUMT3Parameter ValueCollectorVCEO30VBaseIC1AEmitter2SD2656FRA2SD2656SOT-323 (SC-70)lFeatures1) A Collecotr current is large.General Purpose.2) Collector saturation voltage is low.VCE(sat) is Max. 350mVAt IC=500mA, IB=25mA3) Complementary PNP Types :2S

2SD2653KTransistorsLow frequency amplifier2SD2653K External dimensions (Units : mm) ApplicationLow frequency amplifierDriver1.6 Features2.81) A collector current is large.2) VCE(sat) 180mV0.3Min.At IC = 1A / IB = 50mAEach lead has same dimensionsAbbreviated symbol : FW (1) EmitterROHM : SMT3EIAJ : SC-59 (2) BaseJEDEC : SOT-346 (3) Collector Absolute m

2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S Dimensions (Unit : mm) Application Low frequency amplifier Storobo Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA (1)Emitter(GND)(2)Collector(OUT)(3)Base(IN) Taping specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base

2SD2656 Transistors General purpose amplification (30V, 1A) 2SD2656 Application Low frequency amplifier 1.25 Features 2.11) A collector current is large. 2) Collector saturation voltage is low. 0.1Min.VCE(sat) 350mV Each lead has same dimensionsAt IC = 500mA / IB = 25mA ROHM : UMT3 (1) EmitterAbbreviated symbol : EUEIAJ : SC-70 (2) Base JEDEC : SOT-323 (

2SD2614TransistorsMedium Power Transistor(Motor, Relay drive)(6010V, 5A)2SD2614 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to10.0 4.5 "L" loads.3.2 2.8 3) Built-in resistor between base and emitter.4) Built-in damper diode.1.21.30.80.75 ( )2.54 2.54 2.6 (1)

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units : mm) Application Low frequency amplifier Driver 1.6 Features 2.81) A collector current is large. 2) VCE(sat) 350mV 0.3Min.At IC = 1A / IB = 50mA Each lead has same dimensionsROHM : SMT3 Abbreviated symbol : FZ (1) EmitterEIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector

2SD2607TransistorsPower Transistor (100V, 8A)2SD2607 External dimensions (Units: mm) Features1) Darlington connection for high DC current gain.2) Built-in resistor between base and emitter.10.0 4.53.2 2.8 3) Built-in damper diode.4) Complements the 2SB1668.1.21.30.80.752.54 2.54 2.6 Absolute maximum ratings (Ta = 25C) (1) (2) (3)( )(1) (2) (3) (1) B

2SD2657KFRA AEC-Q101 Qualified 2SD2657KFRA

2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89(3)EmitterAbbreviated symbol : FZ Packaging specifications Absolute maximum ratings (Ta=25

2SD2611TransistorsPower Transistor (80V, 7A)2SD2611 Features1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A.2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 100 VCollecto

2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7( )3 Features 1) A collector current is large. ( ) ( )1 22) VCE(sat) : max.250mV 0.95 0.950.16 At lc=1.5A / lB=30mA 1.9(1) Base(2) EmitterEach lead has same dimensions (3) Collector Abso

2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7( )3 Features 1) A collector current is large. 2) VCE(sat) : max. 370mV (1) (2)0.95 0.95 At lc=1.5A / lB=75mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Absolute maxi

2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) 180mV 4.0(IC / IB = 1A / 50mA) 1.0 2.5 0.5(1)(2)(3)(1)BaseROHM : MPT3JEITA : SC-62 (2)CollectorJEDEC: SOT-89 (3)Emitter Abbreviated symbol : FW Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Li

2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XXNPN epitaxial planar silicon transistor

2SD2618TransistorsPower Transistor (80V, 4A)2SD2618 Features Circuit diagram1) Darlington connection for a high hFE.C2) Built-in resistor between base and emitter.3) Built-in damper doide.4) Complements the 2SB1676.BR 300RB : BaseC : CollectorEE : Emitter Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VC

2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit : mm) Application Low frequency amplifier TSMT31.0MAX2.90.85 Features 0.70.4(3)1) A collector current is large. 2) Collector saturation voltage is low. 1 2VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 500mA / IB = 25mA 1.9(1) Base(2) EmitterEach lead

2SD2657 Transistors Low frequency amplifier 2SD2657 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.850.4 0.7(3) Features 1) A collector current is large. 1 22) VCE(sat) : max.350mV ( ) ( )0.95 0.950.16At IC = 1A / IB = 50mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector Packaging

2SD2654DatasheetGeneral purpose Transistor (50V, 150mA)lOutlinel SOT-416 Parameter Value SC-75A VCEO50VIC150mAEMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLOW FREQUENCY AMPLIFIER, DRIVER

2SD2615TransistorsPower Transistor (120V, 6A)2SD2615 Features Circuit diagram1) Darlington connection for high DC current gain.C2) Built-in resistor between base and emitter.3) Built-in damper diode.4) Complements the 2SB1674. BR1 R2ER1 5.0k B : BaseC : CollectorR2 300E : Emitter Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector

2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.70.4( )3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( )1 20.95 0.95At IC = 2A / IB = 40mA 0.161.9(1) Base(2) Emitter Each lead has same dimensions(3) Collector Pac

2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit : mm) Application Low frequency amplifier TSMT3Driver 1.0MAX2.90.85 0.4 0.7(3) Features 1) A collector current is large. (3A) ( ) ( )2) VCE(sat) : max. 250mV 1 20.95 0.950.16At IC = 1.5A / IB = 30mA 1.9(1) Base(2) EmitterEach lead has same dimensions(3) Collector P

2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units : mm) Application Low frequency amplifier Driver 1.6 Features 2.81) A collector current is large. 2) VCE(sat) 350mV 0.3Min.At IC = 1A / IB = 50mA Each lead has same dimensionsROHM : SMT3 Abbreviated symbol : FZ (1) EmitterEIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector

2SD2674DatasheetGeneral purpose amplification (12V, 1.5A)lOutlinel SOT-346T Parameter Value SC-96 VCEO12VIC1.5ATSMT3lFeatures lInner circuitl l1)A collector current is large.2)Collector saturation voltage is low. VCE(sat)200mV at IC=500mA/IB=25mAlApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificat

2SD2616TransisitorsPower Transistor (100V, 5A)2SD2616 Features1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A.2) Excellent hFE current characteristics.3) Pc=30W. (Tc=25C) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 100 VCollector-emitter voltage VCEO 100 VEmitter-base voltage VEBO 5 V5 A(DC)C

2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit : mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base(2)Collector Structure (3)Emitter Abbreviated symbol : XZNPN epitaxial planar silicon transistor

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base

Transistors2SD2620JSilicon NPN epitaxial planer typeUnit: mmFor low-frequency amplification1.60+0.050.030.12+0.030.011.000.053 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)1 2 High emitter to base voltage VBEO 0.270.02(0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2

Transistors2SD2623Silicon NPN epitaxial planar typeFor low-frequency amplificationUnit: mm0.15+0.100.3+0.10.050.0 Features3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing.1 2(0.65) (0.65) Absolute Maximum Ratings Ta = 25C1.30.1Parameter Symbol Rating Unit2

Power Transistors2SD2659Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power switching 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE TO-220D built-in: Excellent package with withstand voltage 5 kVguaranteed1.40.22.60.11.60.20.80.1 0.550.1

Transistors2SD2621Silicon NPN epitaxial planar typeFor low-frequency driver amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.023 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO0.23+0.05 1 20.02(0.40)(0.40)0.800.05 Absolute Maximum Ratings Ta

2SD2651Silicon NPN EpitaxialHigh Voltage AmplifierADE-208-976 (Z)1st. EditionOctober 2000Features High breakdown voltageVCEO = -300V minOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2651Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltag

2SD2655Silicon NPN Epitaxial PlanerLow Frequency Power AmplifierADE-208-1388A (Z)Rev.1Jun. 2001Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Comple

Power Transistor 2SD2633Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold)(Ta=25C) (Ta=25C)Symbol Ratings Unit Symbol Test Conditions Ratings Unit4.2I AV 200 V CBO V =200V 100maxCBO CB10.03.32.8C0.5V 150 V I V =6V 10max mACEO EBO EBI =50mAV 6 V V C 150min VEBO CEOI 8 A h V =2V, I =6A 2000minC FE CE CI 1 A V I =6

CEquivalent circuitBDarlington 2SD2643(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO

CEquivalent circuitBDarlington 2SD2642(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c0.5VCBO 110 ICB

Equivalent circuitCBDarlington 2SD2641(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)RatingsSymbol Ratings Symbol Conditions UnitUnit0.24.80.415.6100max AVCB

Transistors2SD261

2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2603(BR3DD2603F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, low VCE(sat). / Applications Power out amplifier applications. / Equivalent Circuit

2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /

isc Silicon NPN Darlington Power Transistor 2SD2633DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V =1.5V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general pur

isc Silicon NPN Darlington Power Transistor 2SD2642DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1687Minimum Lot-to-Lot variations for robust deviceperformance and reliable op

isc Silicon NPN Power Transistor 2SD2645DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2634DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SD2689DESCRIPTIONHigh speed.High breakdown voltage(VCBO=1500V).High reliability(Adoption of HVP process).Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV Horizontal DeflectionOutput Applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co