Биполярный транзистор 2N5870 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5870
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 87 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 150 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO3
2N5870 Datasheet (PDF)
2n5870.pdf
2N5870Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n5869 2n5870.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
2n5877 2n5878.pdf
Order this documentMOTOROLAby 2N5877/DSEMICONDUCTOR TECHNICAL DATANPN2N5877Complementary Silicon2N5878High-Power Transistors. . . designed for generalpurpose power amplifier and switching applications.10 AMPERE Low CollectorEmitter Saturation Voltage COMPLEMENTARYVCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 AdcSILICON Low Leakage Current POWER TRANSISTOR
2n5879 2n5880 2n5881 2n5882.pdf
Order this documentMOTOROLAby 2N5879/DSEMICONDUCTOR TECHNICAL DATAPNP2N5879Complementary Silicon2N5880*High-Power TransistorsNPN. . . designed for generalpurpose power amplifier and switching applications.2N5881 CollectorEmitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882*2N5882 DC Cur
2n5875 2n5876 2n5877 2n5878.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5879 2n5880 2n5881 2n5882.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5872.pdf
2N5872Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n5871.pdf
2N5871Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n5873.pdf
2N5873Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n5874.pdf
2N5874Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n5879 2n5880 2n5881 2n5882.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comAABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n5879 2n5880.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu
2n5875 2n5876.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5877 2N5878 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu
2n5873 2n5874.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5873 2N5874 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
2n5871 2n5872.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
2n5877 2n5878.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5877 2N5878 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5875 2N5876 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsol
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