JMnic Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum rat

isc Silicon NPN Power Transistor 2N6931DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6931 2N6932 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

isc Silicon NPN Power Transistor 2N6935DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6933 2N6934 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6933/34/35 DESCRIPTION High Switching Speed High Voltage APPLICATIONS Off-line power supplies High voltage inverters Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT2N6933 450VCEV Collector-Emitter 2N6934 550 V Voltage (VBE= -1.5V) 2N6935 6

isc Silicon NPN Power Transistor 2N6933DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2N6932DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2N6934DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for off-line power suppliesswitching regulatorand general purpose applications.ABSOLUTE MAXIMUM RA