2SB1508 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SB1508 DESCRIPTION With TO-3PML package Low collector saturation voltage Complement to type 2SD2281 Wide area of safe operation APPLICATIONS For use in relay drivers ,high-speed Inverters,converters PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter

isc Silicon PNP Power Transistor 2SB1508 DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -6A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2281 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM

Ordering number EN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters. unit mm 2039A Features [2SB1509/2SD2282] Low collector-to-emitter saturation voltage VCE(sat)= 0.5V max. Wide ASO and highly registant to breakdown. Micaless package

Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 Complementary to 2SD2275 3.0 Features Optimum for 55W HiFi output High foward current transfer ratio hFE 5000 to 30000 1.5 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit mm 7.5 0.2 4.5 0.2 For power switching High forward current transfer ratio hFE High-speed switching 0.65 0.1 0.85 0.1 Allowing automatic insertion with radial taping 0.8 C 0.8 C 1.0 0.1 0.7 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 1.15 0.2 1.15 0.2 Parameter Symbol Rating

Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 Complementary to 2SD2276 3.0 Features Optimum for 110W HiFi output High foward current transfer ratio hFE 5000 to 30000 1.5 Low collector to emitter saturation voltage VCE(sat)

isc Silicon PNP Darlington Power Transistor 2SB1502 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -4A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -4A CE(sat) C Complement to Type 2SD2275 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications Optimum for 55W HiFi o

isc Silicon PNP Power Transistor 2SB1507 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -4A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2280 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1509 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= -0.5(V)(Max)@IC= -8A Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD2282 APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARA

isc Silicon PNP Darlington Power Transistor 2SB1503 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -7A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD2276 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications Optimum for 110W HiFi