Power Transistors2SB1548, 2SB1548ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD2374 and 2SD2374AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearityLow collector to emitter saturation voltage VCE(sat)4.6 0.2 Full-pack package which can be installed to the heat sink with9.9 0.32.9 0.2one screwAbs

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-2

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplif

isc Silicon PNP Power Transistor 2SB1548DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageComplement to Type 2SD2374Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE MA

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-2

isc Silicon PNP Power Transistor 2SB1548ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageComplement to Type 2SD2374AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE

Ordering number:EN3715PNP/NPN Epitaxial Planar Silicon Transistors2SB1509/2SD2282High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters. unit:mm2039AFeatures [2SB1509/2SD2282] Low collector-to-emitter saturation voltage :VCE(sat)=0.5V max. Wide ASO and highly registant to breakdown. Micaless package

Ordering number:EN4667PNP Epitaxial Planar Silicon Transistors2SB1527Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains a diode between collector and emitter.2018B Contains a bias resistor between base and emitter.[2SB1527] Large current capacity. Compact package making it easy to realize high-density, sm

DATA SHEETPNP SILICON EPITAXIAL TRANSISTOR2SB1571PNP SILICON EPITAXIAL TRANSISTORPACKAGE DRAWING (Unit: mm)FEATURES Low VCE(sat): VCE(sat)1 -0.35 V Complementary to 2SD24024.50.11.60.21.50.1ABSOLUTE MAXIMUM RATINGS (TA = 25C)Collector to Base Voltage VCBO -50 VCollector to Emitter Voltage VCEO -30 VCE BEmitter to Base Voltage VEBO -6.0 V0.42 0

DATA SHEETSILICON TRANSISTOR2SB1578PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SB1578 features high current capacity in small dimension PACKAGE DRAWING (UNIT: mm)and is ideal for DC/DC converters and mortor drivers.FEATURES New package with dimensions in between those of small signaland power signal package High curren

2SB1590K Transistors Power Transistor (-15V, -1A) 2SB1590K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) SMT3at IC / IB = -0.4A / -20mA. 2) IC = -1A 2.9 1.10.4 0.83) Complements the 2SD2444K. (3)(2) (1) Packaging specification and hFE 0.95 0.950.15Type 2SB1590K1.9(1)EmitterSMT3Package(2)BaseEach lead has

2SB1580 / 2SB1316 / 2SB1567TransistorsPower Transistor (-100V , -2A)2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SB15804.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)4) Complements the 2SD2195 / 2SD1980 / 2SD2398.(2)(3)(1) Base(Gate)(2) Collector(Dr

2SB1561DatasheetMiddle Power Transistor (-60V/-2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-60VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=-150mV at IC/IB=-1A/-50mA.2)Collector-emitter voltage=-60V3)PD=2W (Mounted on a ceramic board(40400.7mm) ).4)Complementary NPN Types

2SB1565TransistorsPower Transistor (-60V, -3A)2SB1565 Features External dimensions (Units : mm)1) Low VCE(sat). (Typ.-0.3V at IC/IB = -2/-0.2A)2) Excellent DC current gain characteristics. 10.0 4.53.2 2.8 3) Wide SOA (safe operating area).1.21.30.80.75 ( )2.54 2.54 2.6 (1) Base Gate(1) (2) (3)( )(2) Collector Drain(1) (2) (3) (3) Emitter(Source)ROHM : TO-

2SB1568TransistorsTransistors2SD2399(96-670-B422)(96-825-D422)300

2SB1566TransistorsTransistors2SD2395(94L-459-B350)(94L-1101-D350)296

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Transistor2SB1537Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23571.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

Transistor2SB1599Silicon PNP epitaxial planer typeFor power amplificationUnit: mmComplementary to 2SD24571.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5 0.08

Power Transistors2SB1553Silicon PNP epitaxial planar typeFor power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High foward current transfer ratio hFE90Satisfactory linearity of foward current transfer ratio hFEAllowing automatic insertion with radial taping1.2 0.1 C1.02.25 0.2Absolute Maximum Ratings (TC=25C)0.65 0.10.35 0.1 1.05 0.1Param

Transistor2SB1539Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23591.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

Power Transistors2SB1502Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm 3.3 0.220.0 0.5 5.0 0.3Complementary to 2SD22753.0FeaturesOptimum for 55W HiFi outputHigh foward current transfer ratio hFE: 5000 to 300001.5Low collector to emitter saturation voltage VCE(sat):

Transistors2SB1589Silicon PNP epitaxial planar typeUnit: mmFor low-frequency output amplification4.50.11.60.2 1.50.1 Features Low collector-emitter saturation voltage VCE(sat) Large collector power dissipation PC1 23 Mini Power type package, allowing downsizing of the equipment0.40.08 0.50.08 0.40.04and automatic insertion through the tape packi

Power Transistors2SB1531Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD234015.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 40W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000 3.2 0.1Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SB1593Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping0.650.1 0.850.10.8 C 0.8 C1.00.10.70.1 Absolute Maximum Ratings Ta = 25C0.70.11.150.21.150.2Parameter Symbol

Transistor2SB1592Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.15 +0.150.45 0.1 0.45 0.1Collector to e

Transistor2SB1537Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23571.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

Transistor2SB1539Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23591.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

Transistor2SB1589Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm1.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4

Transistor2SB1599Silicon PNP epitaxial planer typeFor power amplificationUnit: mmComplementary to 2SD24571.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5 0.08

Power Transistors2SB1574Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm6.50.12.30.15.30.14.350.1 Features 0.50.1 Possible to tsolder radiation fin directly to printed circuit boad Type with universal characteristics High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO1

Power Transistors2SB1504Silicon PNP epitaxial planar type darlingtonUnit: mm7.50.2 4.50.2For power switching High forward current transfer ratio hFE High-speed switching0.650.1 0.850.1 Allowing automatic insertion with radial taping 0.8 C 0.8 C1.00.10.70.1 Absolute Maximum Ratings Ta = 25C0.70.11.150.21.150.2Parameter Symbol Rating

Transistor2SB1592Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmFeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 11 VPea

Power Transistors2SB1503Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm 3.3 0.220.0 0.5 5.0 0.3Complementary to 2SD22763.0FeaturesOptimum for 110W HiFi outputHigh foward current transfer ratio hFE: 5000 to 300001.5Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SB1554Silicon PNP epitaxial planar typeFor power amplificationUnit: mm5.0 0.1Features 10.0 0.2 1.0High forward current transfer ratio hFE which has satisfactory linearity90Allowing automatic insertion with radial taping1.2 0.1 C1.0Absolute Maximum Ratings (TC=25C)2.25 0.20.65 0.1Parameter Symbol Ratings Unit0.35 0.1 1.05 0.1C

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION With TO-3PI package Complement to type 2SD2387 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PI) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER COND

JMnic Product Specification Silicon PNP Power Transistors 2SB1565 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide SOA (safe operating area) Complement to type 2SD2394 PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION With TO-3PN package Complement to type 2SD2389 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION With TO-3PN package Complement to type 2SD2390 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1566 DESCRIPTION With TO-220F package Excellent DC current gain characteristics Low collector saturation voltage Wide SOA (safe operating area) Complement to type 2SD2395 PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Power Transistors 2SB1508 DESCRIPTION With TO-3PML package Low collector saturation voltage Complement to type 2SD2281 Wide area of safe operation APPLICATIONS For use in relay drivers ,high-speed Inverters,converters PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 Emitter

E(70)BDarlington 2SB1587Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Ratings UnitUnit Symbol Conditions0.20.2 5.515.6VCBO 160V ICBO VCB

E(70)BDarlington 2SB1559Equivalent circuit CSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions RatingsSymbol Ratings Unit Unit0.24.80.415.6ICBO AVCBO 160

E(70)BDarlington 2SB1570Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.26.00.336.4VCBO 160 ICBO VCB=160V

E(70)BDarlington 2SB1588Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions RatingsUnit0.20.2 5.515.6VCBO 160 V ICBO VCB=

E(70)BDarlington 2SB1560Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)Application : Audio, Series Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)RatingsSymbol Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 160 VCB=160

ST 2SB1561U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 6 0.5 Total Power Dissipation Ptot W 2 2) Junction Temperature T

Product specification2SB1561-QSOT-89 Unit: mm+0.1 +0.14.50-0.1 1.50-0.1 Features+0.11.80-0.1 Collector Current Capability IC=-2ACollector Emitter Voltage VCEO=-60V2 3Low saturation Voltage typically 1+0.1 +0.1 +0.10.48-0.1 0.53-0.1 0.44-0.1 VCE (SAT)=-0.15Vat IC/IB=-1A/-50mA1. Base1. Source1 Base+0.13.00-0.12 Collector2. Collector2. Drai

SMD Type TransistorsPNP Transistors2SB1590KSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-1A1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD2444K +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SB15991.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SD24570.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5

SMD Type TransistorsPNP Transistors2SB1561SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V Complements the 2SD23910.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -

SMD Type TransistorsPNP Transistors2SB15391.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD23590.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V

SMD Type TransistorsPNP Transistors2SB15891.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. For low-frequency output amplification0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emit

SMD Type TransistorsPNP Transistors2SB1527SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Large current capatance1 2 Low collector-emitter saturation voltage+0.10.95-0.1 0.1+0.05-0.01 Contains a bias resisror between base and emitter +0.11.9-0.1Collector1.Base Base2.EmitterRBE3.collectorEmitter Absolute Maximum Ratings Ta = 2

SMD Type TransistorsPNP Transistors2SB15711.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD24020.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -6 Collector Cur

SMD Type TransistorsPNP Transistors2SB1527SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features Large current capatance Low collector-emitter saturation voltage1 2+0.02+0.10.15 -0.020.95 -0.1 Contains a bias resisror between base and emitterCollector+0.11.9-0.2 Base1. Base2. EmitterRBE3. CollectorEmitter Absolute Maximum Rati

SMD Type TransistorsPNP Transistors2SB15721.70 0.1 Features Low collector-emitter saturation voltage Complementary to 2SD24030.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Cur

SMD Type TransistorsPNP Transistors2SB15371.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD23570.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emitter Voltage VCEO -10 V

SMD Type TransistorsPNP Transistors2SB1574TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Collector breakdown voltage: VCBO/VCEO = 50V Collector current: IC = 2A For low-frequency output amplification0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Ma

SMD Type TransistorsPNP Transistors2SB1580SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V Complements the 2SD2195C0.42 0.10.46 0.11.BaseB2.Collector3.EmitterR1 R2ER1 3.5kR2 300 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsPNP Transistors2SB1578SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to 2SD24250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO

isc Silicon PNP Power Transistor 2SB1569DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2400Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120

isc Silicon PNP Power Transistor 2SB1530DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SD2337Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TVvertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon PNP Darlington Power Transistor 2SB1558DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2387Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1562DESCRIPTIONHigh DC Current Gain-: h = 300~1000@ (V = -5V , I = -0.5A)FE CE CLow Saturation Voltage-: V = -0.5V(TYP)@ (I = -2A, I = -20mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Darlington Power Transistor 2SB1502DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -4AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -4ACE(sat) CComplement to Type 2SD2275Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 55W HiFi o

isc Silicon PNP Power Transistor 2SB1565DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE M

isc Silicon PNP Darlington Power Transistor 2SB1531DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS

isc Silicon PNP Power Transistor 2SB1507DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -4ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2280Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters.ABSOLUTE MAXIMUM

isc Silicon PNP Darlington Power Transistor 2SB1568DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD2399Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

isc Silicon PNP Darlington Power Transistor 2SB1587DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = -6A, V =- 4V)FE C CELow Collector Saturation Voltage-: V = -2.5V(Max)@ (I = -6A, I = -6mA)CE(sat) C BComplement to Type 2SD2438Minimum Lot-to-Lot variations for robust deviceperformance and relia

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1559DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD2389Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and ge

isc Silicon PNP Darlington Power Transistor 2SB1570DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2401Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatioAPPLICATIONSDesigned for audio,series regulator and general purp

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1509 DESCRIPTION Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -8A Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD2282 APPLICATIONS Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARA

isc Silicon PNP Darlington Power Transistor 2SB1588DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2439Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplicati

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1550 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2mounting base 3 Emitter Absolute maximum ratings(Ta=25 )SYMBOL PARAMETER CONDITIONS VALUE

isc Silicon PNP Darlington Power Transistor 2SB1560DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2390Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplicati

isc Silicon PNP Power Transistor 2SB1566DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BWide Area of Safe OperationComplement to Type 2SD2395Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

isc Silicon PNP Darlington Power Transistor 2SB1555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CComplement to Type 2SD2384Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CComplement to Type 2SD2385Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1503DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -7AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD2276Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 110W HiFi

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1551 DESCRIPTION With TO-220Fa package High DC current gain DARLINGTON APPLICATIONS For medium speed and power switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2mounting base Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum

isc Silicon PNP Darlington Power Transistor 2SB1567DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current GainBuilt-in resistor between base and emitterComplement to Type 2SD2398Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power switching applications.ABSOLUTE MAX

isc Silicon PNP Power Transistor 2SB1508DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -6ACE(sat) CGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2281Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters.ABSOLUTE MAXIMUM