Биполярный транзистор 2SB1607 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1607
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 130 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Граничная частота коэффициента передачи тока (ft): 30 MHz
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора: TO220F
2SB1607 Datasheet (PDF)
2sb1607.pdf
Power Transistors2SB1607Silicon PNP epitaxial planar typeFor power switchingUnit: mmComplementary to 2SD24694.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1s
2sb1607.pdf
isc Silicon PNP Power Transistor 2SB1607DESCRIPTIONLarge Collector CurrentSatisfactory Linearity of Foward Current Transfer RatioLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -5ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewComplement to Type 2SD2469Minimum Lot-to-Lot variations for
2sb1605.pdf
Power Transistors2SB1605, 2SB1605ASilicon PNP epitaxial planar typeFor low-freauency power amplificationUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1stalled to the heat sin
2sb1604.pdf
Power Transistors2SB1604, 2SB1604ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mmFeatures4.6 0.2Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C)2.6 0.11
2sb1606.pdf
Power Transistors2SB1606Silicon PNP epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi
2sb1603.pdf
Power Transistors2SB1603, 2SB1603ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2Low collector to emitter saturation voltage VCE(sat) 3.2 0.1High-speed switchingFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Ratings (TC=25C) 2.6 0.11.
2sb1604 2sb1604a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25) SYMBOL PARAMET
2sb1605.pdf
isc Silicon PNP Power Transistor 2SB1605DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -1.2V(Max.)@I = -3ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-freauen
2sb1604.pdf
isc Silicon PNP Power Transistor 2SB1604DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.6V(Max.)@I = -10ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltag
2sb1605 2sb1605a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25
2sb1603 2sb1603a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)
2sb1606.pdf
isc Silicon PNP Power Transistor 2SB1606DESCRIPTIONHigh Collector current IcLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -4ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power
2sb1603.pdf
isc Silicon PNP Power Transistor 2SB1603DESCRIPTIONHigh-speed SwitchingLow Collector to Emitter Saturation Voltage: V = -0.5V(Max.)@I = -2ACE(sat) CFull-pack Package With Outstanding Insulation,Which Can Be Installed to The Heat Sink With One ScrewMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage
2sb1604 2sb1604a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbolAbsolute maximum ratings (Ta=25)
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
